Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits How many free electrons does a p type semiconductor has? Only those produced by doping Any of the above Those produced by doping as well as thermal energy Only those produced by thermal energy Only those produced by doping Any of the above Those produced by doping as well as thermal energy Only those produced by thermal energy ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Either A or B Intrinsic semiconductor Lightly doped semiconductor Highly doped semiconductor Either A or B Intrinsic semiconductor Lightly doped semiconductor Highly doped semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage None of these Rate of thermal generation of electron hole pairs Potential barrier Forward bias voltage None of these Rate of thermal generation of electron hole pairs Potential barrier ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Evaporation None Diffusion process Oxidation Evaporation None Diffusion process Oxidation ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS