Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Fermi level is the amount of energy in which An electron can have at room temperature A hole can have at room temperature Must be given to an electron move to conduction band None of these An electron can have at room temperature A hole can have at room temperature Must be given to an electron move to conduction band None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET All of these Has higher input resistance Has better thermal stability Is less noisy All of these Has higher input resistance Has better thermal stability Is less noisy ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Intrinsic semiconductor Either A or B Lightly doped semiconductor Highly doped semiconductor Intrinsic semiconductor Either A or B Lightly doped semiconductor Highly doped semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An electron in the conduction band Loses its charge easily Has lower energy than the electron in the valence band Jumps to the top of the crystal Has higher energy than the electron in the valence band Loses its charge easily Has lower energy than the electron in the valence band Jumps to the top of the crystal Has higher energy than the electron in the valence band ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage Rate of thermal generation of electron hole pairs Potential barrier None of these Forward bias voltage Rate of thermal generation of electron hole pairs Potential barrier None of these ANSWER DOWNLOAD EXAMIANS APP
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