Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 5 eV 10 eV 2 eV 0.78 eV 5 eV 10 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally Silicon diodes Germanium diodes Either of the above None of these Silicon diodes Germanium diodes Either of the above None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Potential barrier Forward bias voltage Rate of thermal generation of electron hole pairs None of these Potential barrier Forward bias voltage Rate of thermal generation of electron hole pairs None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Diffusion of electrons Diffusion of holes Drift of holes Drift of electrons Diffusion of electrons Diffusion of holes Drift of holes Drift of electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Increases with heavy doping Decreases with light doping Is increased under reverse bias Is independent of applied voltage Increases with heavy doping Decreases with light doping Is increased under reverse bias Is independent of applied voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by None Oxidation Diffusion process Evaporation None Oxidation Diffusion process Evaporation ANSWER DOWNLOAD EXAMIANS APP
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