Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 2 eV 10 eV 5 eV 0.78 eV 2 eV 10 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Germanium Silicon None of these Mixture of silicon and germanium Germanium Silicon None of these Mixture of silicon and germanium ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on None of these Intensity of incident radiation Both frequency and intensity of incident radiation Frequency of incident radiation None of these Intensity of incident radiation Both frequency and intensity of incident radiation Frequency of incident radiation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Either A or B Highly doped semiconductor Lightly doped semiconductor Intrinsic semiconductor Either A or B Highly doped semiconductor Lightly doped semiconductor Intrinsic semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When avalanche breakdown occurs covalent bonds are not affected. True False True False ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS