Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 5 eV 10 eV 0.78 eV 2 eV 5 eV 10 eV 0.78 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface. True False True False ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Rate of thermal generation of electron hole pairs Forward bias voltage None of these Potential barrier Rate of thermal generation of electron hole pairs Forward bias voltage None of these Potential barrier ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is None of these Germanium Mixture of silicon and germanium Silicon None of these Germanium Mixture of silicon and germanium Silicon ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? No hysteresis High dielectric constant Ferroelectric characteristic only above the curie point Electric dipole moment No hysteresis High dielectric constant Ferroelectric characteristic only above the curie point Electric dipole moment ANSWER DOWNLOAD EXAMIANS APP
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