Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 0.78 eV 5 eV 10 eV 2 eV 0.78 eV 5 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed the breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Diffusion process Evaporation Oxidation None Diffusion process Evaporation Oxidation None ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 0.99 99 1.01 100 0.99 99 1.01 100 ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Free electrons exist in Third band Second band First band Conduction band Third band Second band First band Conduction band ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons increases The number of free electrons and holes increase but not by the same amount The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons increases The number of free electrons and holes increase but not by the same amount ANSWER DOWNLOAD EXAMIANS APP
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