Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 5 eV 0.78 eV 2 eV 10 eV 5 eV 0.78 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits How many free electrons does a p type semiconductor has? Those produced by doping as well as thermal energy Only those produced by doping Only those produced by thermal energy Any of the above Those produced by doping as well as thermal energy Only those produced by doping Only those produced by thermal energy Any of the above ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When avalanche breakdown occurs covalent bonds are not affected. True False True False ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Permalloy is A variety of stainless steel A polymer A conon-ferrous alloy used in aircraft industry A nickel an iron alloy having high permeability A variety of stainless steel A polymer A conon-ferrous alloy used in aircraft industry A nickel an iron alloy having high permeability ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Intrinsic semiconductor Either A or B Lightly doped semiconductor Highly doped semiconductor Intrinsic semiconductor Either A or B Lightly doped semiconductor Highly doped semiconductor ANSWER DOWNLOAD EXAMIANS APP
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