Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 10 eV 2 eV 5 eV 0.78 eV 10 eV 2 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Zero or forward bias Zero bias Forward bias Reverse bias Zero or forward bias Zero bias Forward bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has better thermal stability Has higher input resistance All of these Is less noisy Has better thermal stability Has higher input resistance All of these Is less noisy ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits If too large current passes through the diode All electrons will leave All holes will freeze Excessive heat may damage the diode Diode will emit light All electrons will leave All holes will freeze Excessive heat may damage the diode Diode will emit light ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 1.01 0.99 100 99 1.01 0.99 100 99 ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region ANSWER DOWNLOAD EXAMIANS APP
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