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Electronic Devices and Circuits

Electronic Devices and Circuits
Forbidden energy gap in germanium at 0 K is about

2 eV
10 eV
0.78 eV
5 eV

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Electronic Devices and Circuits
An electron in the conduction band

Has higher energy than the electron in the valence band
Has lower energy than the electron in the valence band
Loses its charge easily
Jumps to the top of the crystal

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Electronic Devices and Circuits
The most commonly used semiconductor material is

Germanium
Mixture of silicon and germanium
Silicon
None of these

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Electronic Devices and Circuits
As compared to bipolar junction transistor, a FET

Has higher input resistance
Has better thermal stability
All of these
Is less noisy

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Electronic Devices and Circuits
The depletion layer width of Junction

Is increased under reverse bias
Decreases with light doping
Increases with heavy doping
Is independent of applied voltage

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Electronic Devices and Circuits
For a NPN bipolar transistor, what is the main stream of current in the base region?

Drift of holes
Diffusion of holes
Drift of electrons
Diffusion of electrons

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