Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 10 eV 2 eV 5 eV 0.78 eV 10 eV 2 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Piezoelectric quartz crystal resonators find application where Signal amplification is required Rectification of the signal is required Signal frequency control is required Modulation of signal is required Signal amplification is required Rectification of the signal is required Signal frequency control is required Modulation of signal is required ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Wideband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Free electrons in N-region only Majority carriers in both regions Holes in P-region only Majority as well as minority carriers in both regions Free electrons in N-region only Majority carriers in both regions Holes in P-region only Majority as well as minority carriers in both regions ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Potential barrier None of these Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs Forward bias voltage ANSWER DOWNLOAD EXAMIANS APP
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