Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 10 eV 0.78 eV 5 eV 2 eV 10 eV 0.78 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? Ferroelectric characteristic only above the curie point No hysteresis Electric dipole moment High dielectric constant Ferroelectric characteristic only above the curie point No hysteresis Electric dipole moment High dielectric constant ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has better thermal stability Has higher input resistance Is less noisy All of these Has better thermal stability Has higher input resistance Is less noisy All of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Tunnel diode PIN diode Schottky diode Zener diode Tunnel diode PIN diode Schottky diode Zener diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Is independent of applied voltage Decreases with light doping Is increased under reverse bias Increases with heavy doping Is independent of applied voltage Decreases with light doping Is increased under reverse bias Increases with heavy doping ANSWER DOWNLOAD EXAMIANS APP
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