Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 5 eV 0.78 eV 2 eV 10 eV 5 eV 0.78 eV 2 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Holes Holes and electrons Ions Electrons Holes Holes and electrons Ions Electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which variety of copper has the best conductivity? Hard drawn copper Pure annealed copper Induction hardened copper Copper containing traces of silicon Hard drawn copper Pure annealed copper Induction hardened copper Copper containing traces of silicon ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows For less than fourth cycle Only for the positive half cycle of the input signal Only for the negative half cycle of the input signal For full cycle For less than fourth cycle Only for the positive half cycle of the input signal Only for the negative half cycle of the input signal For full cycle ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Diffusion of holes Drift of holes Diffusion of electrons Drift of electrons Diffusion of holes Drift of holes Diffusion of electrons Drift of electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages ANSWER DOWNLOAD EXAMIANS APP
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