Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 0.78 eV 10 eV 5 eV 2 eV 0.78 eV 10 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Zero or forward bias Zero bias Reverse bias Forward bias Zero or forward bias Zero bias Reverse bias Forward bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons and holes increase but not by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase by the same amount The number of free electrons increases The number of free electrons and holes increase but not by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase by the same amount The number of free electrons increases ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following has highest resistivity? Air Paraffin wax Mica Mineral oil Air Paraffin wax Mica Mineral oil ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Silicon Mixture of silicon and germanium None of these Germanium Silicon Mixture of silicon and germanium None of these Germanium ANSWER DOWNLOAD EXAMIANS APP
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