Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 10 eV 0.78 eV 5 eV 2 eV 10 eV 0.78 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An electron in the conduction band Has higher energy than the electron in the valence band Has lower energy than the electron in the valence band Loses its charge easily Jumps to the top of the crystal Has higher energy than the electron in the valence band Has lower energy than the electron in the valence band Loses its charge easily Jumps to the top of the crystal ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Germanium Mixture of silicon and germanium Silicon None of these Germanium Mixture of silicon and germanium Silicon None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has higher input resistance Has better thermal stability All of these Is less noisy Has higher input resistance Has better thermal stability All of these Is less noisy ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Is increased under reverse bias Decreases with light doping Increases with heavy doping Is independent of applied voltage Is increased under reverse bias Decreases with light doping Increases with heavy doping Is independent of applied voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Drift of holes Diffusion of holes Drift of electrons Diffusion of electrons Drift of holes Diffusion of holes Drift of electrons Diffusion of electrons ANSWER DOWNLOAD EXAMIANS APP
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