Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 5 eV 0.78 eV 10 eV 2 eV 5 eV 0.78 eV 10 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Free electrons in N-region only Majority as well as minority carriers in both regions Majority carriers in both regions Holes in P-region only Free electrons in N-region only Majority as well as minority carriers in both regions Majority carriers in both regions Holes in P-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Tunnel diode Zener diode PIN diode Schottky diode Tunnel diode Zener diode PIN diode Schottky diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? Electric dipole moment High dielectric constant Ferroelectric characteristic only above the curie point No hysteresis Electric dipole moment High dielectric constant Ferroelectric characteristic only above the curie point No hysteresis ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by None Evaporation Diffusion process Oxidation None Evaporation Diffusion process Oxidation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is Normal to both current and magnetic field In the direction of current Antiparallel to magnetic field In arbitrary direction Normal to both current and magnetic field In the direction of current Antiparallel to magnetic field In arbitrary direction ANSWER DOWNLOAD EXAMIANS APP
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