Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 5 eV 0.78 eV 10 eV 2 eV 5 eV 0.78 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by None Evaporation Diffusion process Oxidation None Evaporation Diffusion process Oxidation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on Both frequency and intensity of incident radiation Intensity of incident radiation Frequency of incident radiation None of these Both frequency and intensity of incident radiation Intensity of incident radiation Frequency of incident radiation None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. Both A and R are true and R is correct explanation of A A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is In the direction of current In arbitrary direction Antiparallel to magnetic field Normal to both current and magnetic field In the direction of current In arbitrary direction Antiparallel to magnetic field Normal to both current and magnetic field ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has better thermal stability Has higher input resistance Is less noisy All of these Has better thermal stability Has higher input resistance Is less noisy All of these ANSWER DOWNLOAD EXAMIANS APP
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