Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 5 eV 10 eV 0.78 eV 2 eV 5 eV 10 eV 0.78 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following could be the maximum current rating of junction diode by 126? 10 A 1 A 100 A 20 A 10 A 1 A 100 A 20 A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed half the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of All of these Metals Insulators Semiconductors All of these Metals Insulators Semiconductors ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage Potential barrier Rate of thermal generation of electron hole pairs None of these Forward bias voltage Potential barrier Rate of thermal generation of electron hole pairs None of these ANSWER DOWNLOAD EXAMIANS APP