Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 5 eV 0.78 eV 2 eV 10 eV 5 eV 0.78 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally None of these Germanium diodes Either of the above Silicon diodes None of these Germanium diodes Either of the above Silicon diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Either A or B Highly doped semiconductor Lightly doped semiconductor Intrinsic semiconductor Either A or B Highly doped semiconductor Lightly doped semiconductor Intrinsic semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Holes Electrons Ions Holes and electrons Holes Electrons Ions Holes and electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Evaporation Oxidation Diffusion process None Evaporation Oxidation Diffusion process None ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 99 0.99 1.01 100 99 0.99 1.01 100 ANSWER DOWNLOAD EXAMIANS APP
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