Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 2 eV 10 eV 5 eV 0.78 eV 2 eV 10 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on None of these Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits If too large current passes through the diode Excessive heat may damage the diode All holes will freeze All electrons will leave Diode will emit light Excessive heat may damage the diode All holes will freeze All electrons will leave Diode will emit light ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An electron in the conduction band Loses its charge easily Jumps to the top of the crystal Has lower energy than the electron in the valence band Has higher energy than the electron in the valence band Loses its charge easily Jumps to the top of the crystal Has lower energy than the electron in the valence band Has higher energy than the electron in the valence band ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? PIN diode Tunnel diode Schottky diode Zener diode PIN diode Tunnel diode Schottky diode Zener diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Drift of electrons Diffusion of electrons Diffusion of holes Drift of holes Drift of electrons Diffusion of electrons Diffusion of holes Drift of holes ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS