Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 10 eV 0.78 eV 5 eV 2 eV 10 eV 0.78 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits How many free electrons does a p type semiconductor has? Any of the above Those produced by doping as well as thermal energy Only those produced by thermal energy Only those produced by doping Any of the above Those produced by doping as well as thermal energy Only those produced by thermal energy Only those produced by doping ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage Potential barrier Rate of thermal generation of electron hole pairs None of these Forward bias voltage Potential barrier Rate of thermal generation of electron hole pairs None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 1.01 0.99 100 99 1.01 0.99 100 99 ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET All of these Is less noisy Has better thermal stability Has higher input resistance All of these Is less noisy Has better thermal stability Has higher input resistance ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS