Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 5 eV 0.78 eV 10 eV 2 eV 5 eV 0.78 eV 10 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When avalanche breakdown occurs covalent bonds are not affected. False True False True ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An electron in the conduction band Has higher energy than the electron in the valence band Has lower energy than the electron in the valence band Loses its charge easily Jumps to the top of the crystal Has higher energy than the electron in the valence band Has lower energy than the electron in the valence band Loses its charge easily Jumps to the top of the crystal ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Forward bias Zero bias Reverse bias Zero or forward bias Forward bias Zero bias Reverse bias Zero or forward bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Highly doped semiconductor Either A or B Lightly doped semiconductor Intrinsic semiconductor Highly doped semiconductor Either A or B Lightly doped semiconductor Intrinsic semiconductor ANSWER DOWNLOAD EXAMIANS APP
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