Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 5 eV 0.78 eV 2 eV 10 eV 5 eV 0.78 eV 2 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of All of these Insulators Semiconductors Metals All of these Insulators Semiconductors Metals ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally Germanium diodes None of these Silicon diodes Either of the above Germanium diodes None of these Silicon diodes Either of the above ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Zero or reverse bias Zero bias Reverse bias Forward bias Zero or reverse bias Zero bias Reverse bias Forward bias ANSWER DOWNLOAD EXAMIANS APP
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