Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 5 eV 0.78 eV 10 eV 2 eV 5 eV 0.78 eV 10 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed half the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The sensitivity of human eyes is maximum at Violet portion of spectrum Green portion of spectrum White portion of spectrum Red portion of spectrum Violet portion of spectrum Green portion of spectrum White portion of spectrum Red portion of spectrum ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Is increased under reverse bias Is independent of applied voltage Decreases with light doping Increases with heavy doping Is increased under reverse bias Is independent of applied voltage Decreases with light doping Increases with heavy doping ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is An indirect band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Is less noisy All of these Has better thermal stability Has higher input resistance Is less noisy All of these Has better thermal stability Has higher input resistance ANSWER DOWNLOAD EXAMIANS APP
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