Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 0.78 eV 10 eV 5 eV 2 eV 0.78 eV 10 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Zener diode PIN diode Tunnel diode Schottky diode Zener diode PIN diode Tunnel diode Schottky diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? High dielectric constant Electric dipole moment Ferroelectric characteristic only above the curie point No hysteresis High dielectric constant Electric dipole moment Ferroelectric characteristic only above the curie point No hysteresis ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows For full cycle For less than fourth cycle Only for the negative half cycle of the input signal Only for the positive half cycle of the input signal For full cycle For less than fourth cycle Only for the negative half cycle of the input signal Only for the positive half cycle of the input signal ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Metals Insulators All of these Semiconductors Metals Insulators All of these Semiconductors ANSWER DOWNLOAD EXAMIANS APP
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