Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 0.78 eV 5 eV 2 eV 10 eV 0.78 eV 5 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Holes in P-region only Free electrons in N-region only Majority carriers in both regions Majority as well as minority carriers in both regions Holes in P-region only Free electrons in N-region only Majority carriers in both regions Majority as well as minority carriers in both regions ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 100 99 1.01 0.99 100 99 1.01 0.99 ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In the sale of diamonds the unit of weight is carat. One carat is equal to 200 mg 100 mg 500 mg 150 mg 200 mg 100 mg 500 mg 150 mg ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Holes and electrons Ions Electrons Holes Holes and electrons Ions Electrons Holes ANSWER DOWNLOAD EXAMIANS APP
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