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Electronic Devices and Circuits

Electronic Devices and Circuits
As compared to bipolar junction transistor, a FET

All of these
Is less noisy
Has higher input resistance
Has better thermal stability

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Electronic Devices and Circuits
For a P-N diode, the number of minority carriers crossing the junction depends on

Forward bias voltage
Rate of thermal generation of electron hole pairs
None of these
Potential barrier

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Electronic Devices and Circuits
The amount of photoelectric emission current depends on

Both frequency and intensity of incident radiation
Frequency of incident radiation
Intensity of incident radiation
None of these

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Electronic Devices and Circuits
Free electrons exist in

First band
Conduction band
Third band
Second band

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Electronic Devices and Circuits
A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is

1.01
0.99
100
99

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Electronic Devices and Circuits
Fermi level is the amount of energy in which

None of these
Must be given to an electron move to conduction band
A hole can have at room temperature
An electron can have at room temperature

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