Electronic Devices and Circuits As compared to bipolar junction transistor, a FET All of these Has higher input resistance Is less noisy Has better thermal stability All of these Has higher input resistance Is less noisy Has better thermal stability ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Decreases with light doping Is independent of applied voltage Increases with heavy doping Is increased under reverse bias Decreases with light doping Is independent of applied voltage Increases with heavy doping Is increased under reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In the sale of diamonds the unit of weight is carat. One carat is equal to 100 mg 150 mg 500 mg 200 mg 100 mg 150 mg 500 mg 200 mg ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is None of these Germanium Mixture of silicon and germanium Silicon None of these Germanium Mixture of silicon and germanium Silicon ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has Only a saturation region Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages An ohmic region at low voltage value followed by a saturation region at higher voltages ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Zero bias Forward bias Zero or reverse bias Reverse bias Zero bias Forward bias Zero or reverse bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
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