Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has higher input resistance All of these Is less noisy Has better thermal stability Has higher input resistance All of these Is less noisy Has better thermal stability ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of All of these Insulators Metals Semiconductors All of these Insulators Metals Semiconductors ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 2 eV 5 eV 0.78 eV 10 eV 2 eV 5 eV 0.78 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows Only for the negative half cycle of the input signal For full cycle Only for the positive half cycle of the input signal For less than fourth cycle Only for the negative half cycle of the input signal For full cycle Only for the positive half cycle of the input signal For less than fourth cycle ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Diffusion of holes Drift of holes Diffusion of electrons Drift of electrons Diffusion of holes Drift of holes Diffusion of electrons Drift of electrons ANSWER DOWNLOAD EXAMIANS APP
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