Electronic Devices and Circuits As compared to bipolar junction transistor, a FET All of these Has better thermal stability Is less noisy Has higher input resistance All of these Has better thermal stability Is less noisy Has higher input resistance ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority carriers in both regions Majority as well as minority carriers in both regions Holes in P-region only Free electrons in N-region only Majority carriers in both regions Majority as well as minority carriers in both regions Holes in P-region only Free electrons in N-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally Either of the above Germanium diodes None of these Silicon diodes Either of the above Germanium diodes None of these Silicon diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is None of these Mixture of silicon and germanium Silicon Germanium None of these Mixture of silicon and germanium Silicon Germanium ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Holes Electrons Holes and electrons Ions Holes Electrons Holes and electrons Ions ANSWER DOWNLOAD EXAMIANS APP
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