Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has higher input resistance All of these Has better thermal stability Is less noisy Has higher input resistance All of these Has better thermal stability Is less noisy ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An electron in the conduction band Has higher energy than the electron in the valence band Has lower energy than the electron in the valence band Loses its charge easily Jumps to the top of the crystal Has higher energy than the electron in the valence band Has lower energy than the electron in the valence band Loses its charge easily Jumps to the top of the crystal ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is In the direction of current Antiparallel to magnetic field Normal to both current and magnetic field In arbitrary direction In the direction of current Antiparallel to magnetic field Normal to both current and magnetic field In arbitrary direction ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP