Electronic Devices and Circuits As compared to bipolar junction transistor, a FET All of these Has higher input resistance Is less noisy Has better thermal stability All of these Has higher input resistance Is less noisy Has better thermal stability ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 0.78 eV 5 eV 10 eV 2 eV 0.78 eV 5 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors Metals All of these Insulators Semiconductors Metals All of these Insulators ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows For full cycle Only for the positive half cycle of the input signal Only for the negative half cycle of the input signal For less than fourth cycle For full cycle Only for the positive half cycle of the input signal Only for the negative half cycle of the input signal For less than fourth cycle ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Free electrons exist in First band Conduction band Third band Second band First band Conduction band Third band Second band ANSWER DOWNLOAD EXAMIANS APP
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