Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has better thermal stability Has higher input resistance All of these Is less noisy Has better thermal stability Has higher input resistance All of these Is less noisy ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 5 eV 0.78 eV 10 eV 2 eV 5 eV 0.78 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is In the direction of current Normal to both current and magnetic field In arbitrary direction Antiparallel to magnetic field In the direction of current Normal to both current and magnetic field In arbitrary direction Antiparallel to magnetic field ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 1.01 0.99 100 99 1.01 0.99 100 99 ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Silicon None of these Germanium Mixture of silicon and germanium Silicon None of these Germanium Mixture of silicon and germanium ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
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