Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has higher input resistance Has better thermal stability Is less noisy All of these Has higher input resistance Has better thermal stability Is less noisy All of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Increases with heavy doping Is increased under reverse bias Is independent of applied voltage Decreases with light doping Increases with heavy doping Is increased under reverse bias Is independent of applied voltage Decreases with light doping ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Potential barrier Forward bias voltage Rate of thermal generation of electron hole pairs None of these Potential barrier Forward bias voltage Rate of thermal generation of electron hole pairs None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows Only for the negative half cycle of the input signal For full cycle Only for the positive half cycle of the input signal For less than fourth cycle Only for the negative half cycle of the input signal For full cycle Only for the positive half cycle of the input signal For less than fourth cycle ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally Either of the above None of these Germanium diodes Silicon diodes Either of the above None of these Germanium diodes Silicon diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following could be the maximum current rating of junction diode by 126? 20 A 1 A 100 A 10 A 20 A 1 A 100 A 10 A ANSWER DOWNLOAD EXAMIANS APP
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