Electronic Devices and Circuits Fermi level is the amount of energy in which Must be given to an electron move to conduction band None of these An electron can have at room temperature A hole can have at room temperature Must be given to an electron move to conduction band None of these An electron can have at room temperature A hole can have at room temperature ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase but not by the same amount The number of free electrons increases The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase but not by the same amount The number of free electrons increases ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed the breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally Either of the above Germanium diodes None of these Silicon diodes Either of the above Germanium diodes None of these Silicon diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Zero bias Zero or forward bias Forward bias Reverse bias Zero bias Zero or forward bias Forward bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS