Electronic Devices and Circuits Fermi level is the amount of energy in which Must be given to an electron move to conduction band None of these A hole can have at room temperature An electron can have at room temperature Must be given to an electron move to conduction band None of these A hole can have at room temperature An electron can have at room temperature ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows Only for the negative half cycle of the input signal Only for the positive half cycle of the input signal For less than fourth cycle For full cycle Only for the negative half cycle of the input signal Only for the positive half cycle of the input signal For less than fourth cycle For full cycle ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When avalanche breakdown occurs covalent bonds are not affected. False True False True ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only a saturation region ANSWER DOWNLOAD EXAMIANS APP
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