Electronic Devices and Circuits Fermi level is the amount of energy in which An electron can have at room temperature A hole can have at room temperature None of these Must be given to an electron move to conduction band An electron can have at room temperature A hole can have at room temperature None of these Must be given to an electron move to conduction band ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons increases The number of free electrons and holes increase but not by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase by the same amount The number of free electrons increases The number of free electrons and holes increase but not by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase by the same amount ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is Normal to both current and magnetic field In the direction of current Antiparallel to magnetic field In arbitrary direction Normal to both current and magnetic field In the direction of current Antiparallel to magnetic field In arbitrary direction ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Zero or forward bias Zero bias Forward bias Reverse bias Zero or forward bias Zero bias Forward bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage Rate of thermal generation of electron hole pairs None of these Potential barrier Forward bias voltage Rate of thermal generation of electron hole pairs None of these Potential barrier ANSWER DOWNLOAD EXAMIANS APP
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