Electronic Devices and Circuits
The depletion layer width of Junction

Is independent of applied voltage
Is increased under reverse bias
Decreases with light doping
Increases with heavy doping

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Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

The number of free electrons and holes increase but not by the same amount
The number of free electrons increases but the number of holes decreases
The number of free electrons increases
The number of free electrons and holes increase by the same amount

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Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

A is true but R is false
Both A and R are true but R is not a correct explanation of A
Both A and R are true and R is correct explanation of A
A is false but R is true

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