Electronic Devices and Circuits
The depletion layer width of Junction

Decreases with light doping
Is increased under reverse bias
Is independent of applied voltage
Increases with heavy doping

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Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

The number of free electrons increases but the number of holes decreases
The number of free electrons and holes increase by the same amount
The number of free electrons and holes increase but not by the same amount
The number of free electrons increases

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