Electronic Devices and Circuits
The depletion layer width of Junction

Decreases with light doping
Increases with heavy doping
Is increased under reverse bias
Is independent of applied voltage

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Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

An ohmic region at large voltage values preceded by a saturation region at lower voltages
Only a saturation region
Only an ohmic region
An ohmic region at low voltage value followed by a saturation region at higher voltages

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Electronic Devices and Circuits
Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is false but R is true
A is true but R is false

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