Electronic Devices and Circuits The depletion layer width of Junction Is increased under reverse bias Is independent of applied voltage Increases with heavy doping Decreases with light doping Is increased under reverse bias Is independent of applied voltage Increases with heavy doping Decreases with light doping ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on Both frequency and intensity of incident radiation Frequency of incident radiation Intensity of incident radiation None of these Both frequency and intensity of incident radiation Frequency of incident radiation Intensity of incident radiation None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Potential barrier Forward bias voltage None of these Rate of thermal generation of electron hole pairs Potential barrier Forward bias voltage None of these Rate of thermal generation of electron hole pairs ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors Insulators All of these Metals Semiconductors Insulators All of these Metals ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Is less noisy Has better thermal stability All of these Has higher input resistance Is less noisy Has better thermal stability All of these Has higher input resistance ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Piezoelectric quartz crystal resonators find application where Rectification of the signal is required Modulation of signal is required Signal frequency control is required Signal amplification is required Rectification of the signal is required Modulation of signal is required Signal frequency control is required Signal amplification is required ANSWER DOWNLOAD EXAMIANS APP
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