Electronic Devices and Circuits The depletion layer width of Junction Decreases with light doping Is increased under reverse bias Is independent of applied voltage Increases with heavy doping Decreases with light doping Is increased under reverse bias Is independent of applied voltage Increases with heavy doping ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface. False True False True ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed half the breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows For full cycle For less than fourth cycle Only for the negative half cycle of the input signal Only for the positive half cycle of the input signal For full cycle For less than fourth cycle Only for the negative half cycle of the input signal Only for the positive half cycle of the input signal ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Diffusion of holes Drift of holes Drift of electrons Diffusion of electrons Diffusion of holes Drift of holes Drift of electrons Diffusion of electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Silicon None of these Mixture of silicon and germanium Germanium Silicon None of these Mixture of silicon and germanium Germanium ANSWER DOWNLOAD EXAMIANS APP
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