Electronic Devices and Circuits
The depletion layer width of Junction

Is independent of applied voltage
Increases with heavy doping
Is increased under reverse bias
Decreases with light doping

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Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

An ohmic region at low voltage value followed by a saturation region at higher voltages
Only a saturation region
Only an ohmic region
An ohmic region at large voltage values preceded by a saturation region at lower voltages

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Electronic Devices and Circuits
Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

A is true but R is false
A is false but R is true
Both A and R are true but R is not a correct explanation of A
Both A and R are true and R is correct explanation of A

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