Electronic Devices and Circuits
Which one of the following is not a characteristic of a ferroelectric material?

Electric dipole moment
Ferroelectric characteristic only above the curie point
No hysteresis
High dielectric constant

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Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

The number of free electrons increases but the number of holes decreases
The number of free electrons increases
The number of free electrons and holes increase but not by the same amount
The number of free electrons and holes increase by the same amount

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Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

Only an ohmic region
An ohmic region at large voltage values preceded by a saturation region at lower voltages
An ohmic region at low voltage value followed by a saturation region at higher voltages
Only a saturation region

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Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Both A and R are true but R is not a correct explanation of A
A is false but R is true
A is true but R is false
Both A and R are true and R is correct explanation of A

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