Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage Rate of thermal generation of electron hole pairs Potential barrier None of these Forward bias voltage Rate of thermal generation of electron hole pairs Potential barrier None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Is increased under reverse bias Is independent of applied voltage Increases with heavy doping Decreases with light doping Is increased under reverse bias Is independent of applied voltage Increases with heavy doping Decreases with light doping ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Ions Holes Electrons Holes and electrons Ions Holes Electrons Holes and electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The sensitivity of human eyes is maximum at Red portion of spectrum Violet portion of spectrum Green portion of spectrum White portion of spectrum Red portion of spectrum Violet portion of spectrum Green portion of spectrum White portion of spectrum ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface. True False True False ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? No hysteresis High dielectric constant Ferroelectric characteristic only above the curie point Electric dipole moment No hysteresis High dielectric constant Ferroelectric characteristic only above the curie point Electric dipole moment ANSWER DOWNLOAD EXAMIANS APP
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