Electronic Devices and Circuits
For a P-N diode, the number of minority carriers crossing the junction depends on

Rate of thermal generation of electron hole pairs
Potential barrier
Forward bias voltage
None of these

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Electronic Devices and Circuits
Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow.

A is false but R is true
A is true but R is false
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A

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Electronic Devices and Circuits
Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant.

A is true but R is false
Both A and R are true but R is not a correct explanation of A
Both A and R are true and R is correct explanation of A
A is false but R is true

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Electronic Devices and Circuits
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

may be equal to or less than breakdown voltage
should not exceed one third the breakdown voltage
should not exceed the breakdown voltage
should not exceed half the breakdown voltage

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