Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on None of these Rate of thermal generation of electron hole pairs Potential barrier Forward bias voltage None of these Rate of thermal generation of electron hole pairs Potential barrier Forward bias voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 100 0.99 1.01 99 100 0.99 1.01 99 ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following could be the maximum current rating of junction diode by 126? 20 A 1 A 10 A 100 A 20 A 1 A 10 A 100 A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Highly doped semiconductor Intrinsic semiconductor Lightly doped semiconductor Either A or B Highly doped semiconductor Intrinsic semiconductor Lightly doped semiconductor Either A or B ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Metals Insulators All of these Semiconductors Metals Insulators All of these Semiconductors ANSWER DOWNLOAD EXAMIANS APP
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