Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on None of these Forward bias voltage Potential barrier Rate of thermal generation of electron hole pairs None of these Forward bias voltage Potential barrier Rate of thermal generation of electron hole pairs ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Intrinsic semiconductor Either A or B Lightly doped semiconductor Highly doped semiconductor Intrinsic semiconductor Either A or B Lightly doped semiconductor Highly doped semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Germanium Mixture of silicon and germanium Silicon None of these Germanium Mixture of silicon and germanium Silicon None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When avalanche breakdown occurs covalent bonds are not affected. True False True False ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Zener diode PIN diode Tunnel diode Schottky diode Zener diode PIN diode Tunnel diode Schottky diode ANSWER DOWNLOAD EXAMIANS APP
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