Electronic Devices and Circuits
For a P-N diode, the number of minority carriers crossing the junction depends on

None of these
Potential barrier
Rate of thermal generation of electron hole pairs
Forward bias voltage

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Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

Only a saturation region
An ohmic region at large voltage values preceded by a saturation region at lower voltages
An ohmic region at low voltage value followed by a saturation region at higher voltages
Only an ohmic region

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Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

The number of free electrons increases
The number of free electrons and holes increase by the same amount
The number of free electrons increases but the number of holes decreases
The number of free electrons and holes increase but not by the same amount

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