Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage Rate of thermal generation of electron hole pairs Potential barrier None of these Forward bias voltage Rate of thermal generation of electron hole pairs Potential barrier None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Forward bias Zero bias Zero or reverse bias Reverse bias Forward bias Zero bias Zero or reverse bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on Frequency of incident radiation None of these Intensity of incident radiation Both frequency and intensity of incident radiation Frequency of incident radiation None of these Intensity of incident radiation Both frequency and intensity of incident radiation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits If too large current passes through the diode Excessive heat may damage the diode All electrons will leave All holes will freeze Diode will emit light Excessive heat may damage the diode All electrons will leave All holes will freeze Diode will emit light ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Fermi level is the amount of energy in which None of these A hole can have at room temperature Must be given to an electron move to conduction band An electron can have at room temperature None of these A hole can have at room temperature Must be given to an electron move to conduction band An electron can have at room temperature ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is An indirect band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor Direct band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
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