Electronic Devices and Circuits Light dependent resistors are Highly doped semiconductor Either A or B Intrinsic semiconductor Lightly doped semiconductor Highly doped semiconductor Either A or B Intrinsic semiconductor Lightly doped semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Direct band gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Oxidation Diffusion process None Evaporation Oxidation Diffusion process None Evaporation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In the sale of diamonds the unit of weight is carat. One carat is equal to 200 mg 500 mg 150 mg 100 mg 200 mg 500 mg 150 mg 100 mg ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Fermi level is the amount of energy in which Must be given to an electron move to conduction band A hole can have at room temperature An electron can have at room temperature None of these Must be given to an electron move to conduction band A hole can have at room temperature An electron can have at room temperature None of these ANSWER DOWNLOAD EXAMIANS APP
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