Electronic Devices and Circuits Light dependent resistors are Intrinsic semiconductor Lightly doped semiconductor Either A or B Highly doped semiconductor Intrinsic semiconductor Lightly doped semiconductor Either A or B Highly doped semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows For full cycle Only for the negative half cycle of the input signal Only for the positive half cycle of the input signal For less than fourth cycle For full cycle Only for the negative half cycle of the input signal Only for the positive half cycle of the input signal For less than fourth cycle ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Reverse bias Zero or forward bias Zero bias Forward bias Reverse bias Zero or forward bias Zero bias Forward bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors Insulators Metals All of these Semiconductors Insulators Metals All of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Is independent of applied voltage Decreases with light doping Is increased under reverse bias Increases with heavy doping Is independent of applied voltage Decreases with light doping Is increased under reverse bias Increases with heavy doping ANSWER DOWNLOAD EXAMIANS APP
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