Electronic Devices and Circuits Light dependent resistors are Intrinsic semiconductor Highly doped semiconductor Either A or B Lightly doped semiconductor Intrinsic semiconductor Highly doped semiconductor Either A or B Lightly doped semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Forward bias Zero bias Reverse bias Zero or reverse bias Forward bias Zero bias Reverse bias Zero or reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is An indirect band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is In the direction of current Normal to both current and magnetic field Antiparallel to magnetic field In arbitrary direction In the direction of current Normal to both current and magnetic field Antiparallel to magnetic field In arbitrary direction ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on None of these Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier ANSWER DOWNLOAD EXAMIANS APP
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