Electronic Devices and Circuits Light dependent resistors are Lightly doped semiconductor Either A or B Intrinsic semiconductor Highly doped semiconductor Lightly doped semiconductor Either A or B Intrinsic semiconductor Highly doped semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at large voltage values preceded by a saturation region at lower voltages An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region Only a saturation region ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 0.78 eV 2 eV 5 eV 10 eV 0.78 eV 2 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons and holes increase but not by the same amount The number of free electrons increases The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase but not by the same amount The number of free electrons increases The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
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