Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

The number of free electrons increases but the number of holes decreases
The number of free electrons increases
The number of free electrons and holes increase by the same amount
The number of free electrons and holes increase but not by the same amount

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Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

A is true but R is false
A is false but R is true
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A

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Electronic Devices and Circuits
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

should not exceed half the breakdown voltage
should not exceed one third the breakdown voltage
should not exceed the breakdown voltage
may be equal to or less than breakdown voltage

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