Electronic Devices and Circuits In the sale of diamonds the unit of weight is carat. One carat is equal to 200 mg 150 mg 500 mg 100 mg 200 mg 150 mg 500 mg 100 mg ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Decreases with light doping Is increased under reverse bias Increases with heavy doping Is independent of applied voltage Decreases with light doping Is increased under reverse bias Increases with heavy doping Is independent of applied voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? High dielectric constant Ferroelectric characteristic only above the curie point Electric dipole moment No hysteresis High dielectric constant Ferroelectric characteristic only above the curie point Electric dipole moment No hysteresis ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 5 eV 0.78 eV 10 eV 2 eV 5 eV 0.78 eV 10 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
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