Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at large voltage values preceded by a saturation region at lower voltages Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Insulators Metals All of these Semiconductors Insulators Metals All of these Semiconductors ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on Intensity of incident radiation Both frequency and intensity of incident radiation None of these Frequency of incident radiation Intensity of incident radiation Both frequency and intensity of incident radiation None of these Frequency of incident radiation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET All of these Has higher input resistance Has better thermal stability Is less noisy All of these Has higher input resistance Has better thermal stability Is less noisy ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
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