Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Permalloy is A conon-ferrous alloy used in aircraft industry A polymer A variety of stainless steel A nickel an iron alloy having high permeability A conon-ferrous alloy used in aircraft industry A polymer A variety of stainless steel A nickel an iron alloy having high permeability ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase but not by the same amount The number of free electrons increases The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase but not by the same amount The number of free electrons increases The number of free electrons and holes increase by the same amount ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on Intensity of incident radiation Both frequency and intensity of incident radiation None of these Frequency of incident radiation Intensity of incident radiation Both frequency and intensity of incident radiation None of these Frequency of incident radiation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority as well as minority carriers in both regions Holes in P-region only Majority carriers in both regions Free electrons in N-region only Majority as well as minority carriers in both regions Holes in P-region only Majority carriers in both regions Free electrons in N-region only ANSWER DOWNLOAD EXAMIANS APP
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