Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Lightly doped semiconductor Either A or B Intrinsic semiconductor Highly doped semiconductor Lightly doped semiconductor Either A or B Intrinsic semiconductor Highly doped semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Fermi level is the amount of energy in which None of these An electron can have at room temperature Must be given to an electron move to conduction band A hole can have at room temperature None of these An electron can have at room temperature Must be given to an electron move to conduction band A hole can have at room temperature ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
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