Electronic Devices and Circuits Power diodes are generally Germanium diodes None of these Either of the above Silicon diodes Germanium diodes None of these Either of the above Silicon diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Highly doped semiconductor Either A or B Intrinsic semiconductor Lightly doped semiconductor Highly doped semiconductor Either A or B Intrinsic semiconductor Lightly doped semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority carriers in both regions Majority as well as minority carriers in both regions Free electrons in N-region only Holes in P-region only Majority carriers in both regions Majority as well as minority carriers in both regions Free electrons in N-region only Holes in P-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Direct band gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is None of these Mixture of silicon and germanium Germanium Silicon None of these Mixture of silicon and germanium Germanium Silicon ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Is independent of applied voltage Increases with heavy doping Decreases with light doping Is increased under reverse bias Is independent of applied voltage Increases with heavy doping Decreases with light doping Is increased under reverse bias ANSWER DOWNLOAD EXAMIANS APP
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