Electronic Devices and Circuits Power diodes are generally None of these Either of the above Germanium diodes Silicon diodes None of these Either of the above Germanium diodes Silicon diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on Both frequency and intensity of incident radiation Frequency of incident radiation Intensity of incident radiation None of these Both frequency and intensity of incident radiation Frequency of incident radiation Intensity of incident radiation None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following could be the maximum current rating of junction diode by 126? 100 A 10 A 20 A 1 A 100 A 10 A 20 A 1 A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 5 eV 2 eV 0.78 eV 10 eV 5 eV 2 eV 0.78 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Electrons Holes Holes and electrons Ions Electrons Holes Holes and electrons Ions ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Zero or reverse bias Forward bias Reverse bias Zero bias Zero or reverse bias Forward bias Reverse bias Zero bias ANSWER DOWNLOAD EXAMIANS APP
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