Electronic Devices and Circuits
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

should not exceed one third the breakdown voltage
should not exceed the breakdown voltage
should not exceed half the breakdown voltage
may be equal to or less than breakdown voltage

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Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

The number of free electrons increases but the number of holes decreases
The number of free electrons and holes increase by the same amount
The number of free electrons increases
The number of free electrons and holes increase but not by the same amount

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Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

An ohmic region at large voltage values preceded by a saturation region at lower voltages
Only a saturation region
An ohmic region at low voltage value followed by a saturation region at higher voltages
Only an ohmic region

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