Electronic Devices and Circuits Power diodes are generally None of these Germanium diodes Silicon diodes Either of the above None of these Germanium diodes Silicon diodes Either of the above ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Potential barrier Forward bias voltage None of these Rate of thermal generation of electron hole pairs Potential barrier Forward bias voltage None of these Rate of thermal generation of electron hole pairs ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Direct band gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Schottky diode PIN diode Zener diode Tunnel diode Schottky diode PIN diode Zener diode Tunnel diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 10 eV 0.78 eV 5 eV 2 eV 10 eV 0.78 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Insulators Metals Semiconductors All of these Insulators Metals Semiconductors All of these ANSWER DOWNLOAD EXAMIANS APP
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