Electronic Devices and Circuits Power diodes are generally Either of the above None of these Germanium diodes Silicon diodes Either of the above None of these Germanium diodes Silicon diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Direct band gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The sensitivity of human eyes is maximum at Violet portion of spectrum Red portion of spectrum White portion of spectrum Green portion of spectrum Violet portion of spectrum Red portion of spectrum White portion of spectrum Green portion of spectrum ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons and holes increase but not by the same amount The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons increases The number of free electrons and holes increase but not by the same amount The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons increases ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs ANSWER DOWNLOAD EXAMIANS APP
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