Electronic Devices and Circuits Power diodes are generally Silicon diodes Germanium diodes Either of the above None of these Silicon diodes Germanium diodes Either of the above None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Diffusion process None Evaporation Oxidation Diffusion process None Evaporation Oxidation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is None of these Mixture of silicon and germanium Silicon Germanium None of these Mixture of silicon and germanium Silicon Germanium ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on None of these Intensity of incident radiation Both frequency and intensity of incident radiation Frequency of incident radiation None of these Intensity of incident radiation Both frequency and intensity of incident radiation Frequency of incident radiation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Fermi level is the amount of energy in which Must be given to an electron move to conduction band A hole can have at room temperature An electron can have at room temperature None of these Must be given to an electron move to conduction band A hole can have at room temperature An electron can have at room temperature None of these ANSWER DOWNLOAD EXAMIANS APP
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