Electronic Devices and Circuits Power diodes are generally Germanium diodes Either of the above Silicon diodes None of these Germanium diodes Either of the above Silicon diodes None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 5 eV 0.78 eV 10 eV 2 eV 5 eV 0.78 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 1.01 0.99 99 100 1.01 0.99 99 100 ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on Intensity of incident radiation Frequency of incident radiation Both frequency and intensity of incident radiation None of these Intensity of incident radiation Frequency of incident radiation Both frequency and intensity of incident radiation None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Lightly doped semiconductor Intrinsic semiconductor Either A or B Highly doped semiconductor Lightly doped semiconductor Intrinsic semiconductor Either A or B Highly doped semiconductor ANSWER DOWNLOAD EXAMIANS APP
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