Electronic Devices and Circuits Power diodes are generally Either of the above None of these Germanium diodes Silicon diodes Either of the above None of these Germanium diodes Silicon diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Germanium None of these Silicon Mixture of silicon and germanium Germanium None of these Silicon Mixture of silicon and germanium ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Diffusion of holes Drift of holes Diffusion of electrons Drift of electrons Diffusion of holes Drift of holes Diffusion of electrons Drift of electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 10 eV 5 eV 2 eV 0.78 eV 10 eV 5 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has higher input resistance Is less noisy Has better thermal stability All of these Has higher input resistance Is less noisy Has better thermal stability All of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
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