Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Free electrons in N-region only Majority carriers in both regions Majority as well as minority carriers in both regions Holes in P-region only Free electrons in N-region only Majority carriers in both regions Majority as well as minority carriers in both regions Holes in P-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of All of these Metals Insulators Semiconductors All of these Metals Insulators Semiconductors ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is In arbitrary direction Normal to both current and magnetic field In the direction of current Antiparallel to magnetic field In arbitrary direction Normal to both current and magnetic field In the direction of current Antiparallel to magnetic field ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits If too large current passes through the diode All holes will freeze Excessive heat may damage the diode All electrons will leave Diode will emit light All holes will freeze Excessive heat may damage the diode All electrons will leave Diode will emit light ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
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