Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Free electrons in N-region only Holes in P-region only Majority carriers in both regions Majority as well as minority carriers in both regions Free electrons in N-region only Holes in P-region only Majority carriers in both regions Majority as well as minority carriers in both regions ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Piezoelectric quartz crystal resonators find application where Rectification of the signal is required Signal frequency control is required Signal amplification is required Modulation of signal is required Rectification of the signal is required Signal frequency control is required Signal amplification is required Modulation of signal is required ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Diffusion of holes Diffusion of electrons Drift of electrons Drift of holes Diffusion of holes Diffusion of electrons Drift of electrons Drift of holes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is Normal to both current and magnetic field In the direction of current In arbitrary direction Antiparallel to magnetic field Normal to both current and magnetic field In the direction of current In arbitrary direction Antiparallel to magnetic field ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
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