Electronic Devices and Circuits
In a semiconductor diode, the barrier offers opposition to

Holes in P-region only
Majority carriers in both regions
Free electrons in N-region only
Majority as well as minority carriers in both regions

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Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

The number of free electrons increases but the number of holes decreases
The number of free electrons and holes increase but not by the same amount
The number of free electrons and holes increase by the same amount
The number of free electrons increases

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Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

An ohmic region at large voltage values preceded by a saturation region at lower voltages
Only a saturation region
Only an ohmic region
An ohmic region at low voltage value followed by a saturation region at higher voltages

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