Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority as well as minority carriers in both regions Free electrons in N-region only Holes in P-region only Majority carriers in both regions Majority as well as minority carriers in both regions Free electrons in N-region only Holes in P-region only Majority carriers in both regions ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Free electrons exist in Third band First band Conduction band Second band Third band First band Conduction band Second band ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at large voltage values preceded by a saturation region at lower voltages Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 5 eV 10 eV 0.78 eV 2 eV 5 eV 10 eV 0.78 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits How many free electrons does a p type semiconductor has? Only those produced by thermal energy Those produced by doping as well as thermal energy Only those produced by doping Any of the above Only those produced by thermal energy Those produced by doping as well as thermal energy Only those produced by doping Any of the above ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET All of these Has higher input resistance Has better thermal stability Is less noisy All of these Has higher input resistance Has better thermal stability Is less noisy ANSWER DOWNLOAD EXAMIANS APP
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