Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Holes in P-region only Majority as well as minority carriers in both regions Majority carriers in both regions Free electrons in N-region only Holes in P-region only Majority as well as minority carriers in both regions Majority carriers in both regions Free electrons in N-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed one third the breakdown voltage should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is An indirect band gap semiconductor Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Rate of thermal generation of electron hole pairs None of these Forward bias voltage Potential barrier Rate of thermal generation of electron hole pairs None of these Forward bias voltage Potential barrier ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? High dielectric constant Ferroelectric characteristic only above the curie point No hysteresis Electric dipole moment High dielectric constant Ferroelectric characteristic only above the curie point No hysteresis Electric dipole moment ANSWER DOWNLOAD EXAMIANS APP
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