Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Holes in P-region only Majority as well as minority carriers in both regions Majority carriers in both regions Free electrons in N-region only Holes in P-region only Majority as well as minority carriers in both regions Majority carriers in both regions Free electrons in N-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Metals Semiconductors All of these Insulators Metals Semiconductors All of these Insulators ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Diffusion process Evaporation None Oxidation Diffusion process Evaporation None Oxidation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Ions Electrons Holes Holes and electrons Ions Electrons Holes Holes and electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Drift of electrons Diffusion of holes Drift of holes Diffusion of electrons Drift of electrons Diffusion of holes Drift of holes Diffusion of electrons ANSWER DOWNLOAD EXAMIANS APP
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