Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of All of these Semiconductors Insulators Metals All of these Semiconductors Insulators Metals ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When avalanche breakdown occurs covalent bonds are not affected. False True False True ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Diffusion process None Oxidation Evaporation Diffusion process None Oxidation Evaporation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 5 eV 2 eV 0.78 eV 10 eV 5 eV 2 eV 0.78 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Decreases with light doping Is increased under reverse bias Increases with heavy doping Is independent of applied voltage Decreases with light doping Is increased under reverse bias Increases with heavy doping Is independent of applied voltage ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS