Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Insulators Semiconductors Metals All of these Insulators Semiconductors Metals All of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has higher input resistance Is less noisy All of these Has better thermal stability Has higher input resistance Is less noisy All of these Has better thermal stability ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Holes and electrons Ions Electrons Holes Holes and electrons Ions Electrons Holes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Fermi level is the amount of energy in which Must be given to an electron move to conduction band A hole can have at room temperature An electron can have at room temperature None of these Must be given to an electron move to conduction band A hole can have at room temperature An electron can have at room temperature None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS