Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors All of these Insulators Metals Semiconductors All of these Insulators Metals ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Zero bias Forward bias Zero or reverse bias Reverse bias Zero bias Forward bias Zero or reverse bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Evaporation None Diffusion process Oxidation Evaporation None Diffusion process Oxidation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? Electric dipole moment Ferroelectric characteristic only above the curie point High dielectric constant No hysteresis Electric dipole moment Ferroelectric characteristic only above the curie point High dielectric constant No hysteresis ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at large voltage values preceded by a saturation region at lower voltages Only a saturation region Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages An ohmic region at large voltage values preceded by a saturation region at lower voltages Only a saturation region Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on Frequency of incident radiation Intensity of incident radiation Both frequency and intensity of incident radiation None of these Frequency of incident radiation Intensity of incident radiation Both frequency and intensity of incident radiation None of these ANSWER DOWNLOAD EXAMIANS APP
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