Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Metals Semiconductors All of these Insulators Metals Semiconductors All of these Insulators ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Increases with heavy doping Is independent of applied voltage Decreases with light doping Is increased under reverse bias Increases with heavy doping Is independent of applied voltage Decreases with light doping Is increased under reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 10 eV 5 eV 0.78 eV 2 eV 10 eV 5 eV 0.78 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons increases The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase but not by the same amount The number of free electrons and holes increase by the same amount The number of free electrons increases The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase but not by the same amount The number of free electrons and holes increase by the same amount ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has higher input resistance All of these Is less noisy Has better thermal stability Has higher input resistance All of these Is less noisy Has better thermal stability ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits If too large current passes through the diode All electrons will leave Diode will emit light Excessive heat may damage the diode All holes will freeze All electrons will leave Diode will emit light Excessive heat may damage the diode All holes will freeze ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS