Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors Insulators All of these Metals Semiconductors Insulators All of these Metals ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Diffusion process None Oxidation Evaporation Diffusion process None Oxidation Evaporation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An electron in the conduction band Has lower energy than the electron in the valence band Jumps to the top of the crystal Loses its charge easily Has higher energy than the electron in the valence band Has lower energy than the electron in the valence band Jumps to the top of the crystal Loses its charge easily Has higher energy than the electron in the valence band ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 0.78 eV 5 eV 2 eV 10 eV 0.78 eV 5 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Forward bias Reverse bias Zero or forward bias Zero bias Forward bias Reverse bias Zero or forward bias Zero bias ANSWER DOWNLOAD EXAMIANS APP
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