Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors Insulators All of these Metals Semiconductors Insulators All of these Metals ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Wideband gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Lightly doped semiconductor Highly doped semiconductor Intrinsic semiconductor Either A or B Lightly doped semiconductor Highly doped semiconductor Intrinsic semiconductor Either A or B ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally Silicon diodes Germanium diodes None of these Either of the above Silicon diodes Germanium diodes None of these Either of the above ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 0.99 1.01 100 99 0.99 1.01 100 99 ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
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