Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Metals Semiconductors All of these Insulators Metals Semiconductors All of these Insulators ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage Rate of thermal generation of electron hole pairs Potential barrier None of these Forward bias voltage Rate of thermal generation of electron hole pairs Potential barrier None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on Intensity of incident radiation Both frequency and intensity of incident radiation Frequency of incident radiation None of these Intensity of incident radiation Both frequency and intensity of incident radiation Frequency of incident radiation None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following could be the maximum current rating of junction diode by 126? 10 A 100 A 20 A 1 A 10 A 100 A 20 A 1 A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Holes and electrons Electrons Ions Holes Holes and electrons Electrons Ions Holes ANSWER DOWNLOAD EXAMIANS APP
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