Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors Metals Insulators All of these Semiconductors Metals Insulators All of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET All of these Is less noisy Has better thermal stability Has higher input resistance All of these Is less noisy Has better thermal stability Has higher input resistance ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally None of these Either of the above Germanium diodes Silicon diodes None of these Either of the above Germanium diodes Silicon diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Ions Holes and electrons Electrons Holes Ions Holes and electrons Electrons Holes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Intrinsic semiconductor Lightly doped semiconductor Either A or B Highly doped semiconductor Intrinsic semiconductor Lightly doped semiconductor Either A or B Highly doped semiconductor ANSWER DOWNLOAD EXAMIANS APP