Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors Metals All of these Insulators Semiconductors Metals All of these Insulators ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on Intensity of incident radiation Frequency of incident radiation Both frequency and intensity of incident radiation None of these Intensity of incident radiation Frequency of incident radiation Both frequency and intensity of incident radiation None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Zero or forward bias Forward bias Reverse bias Zero bias Zero or forward bias Forward bias Reverse bias Zero bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Forward bias Reverse bias Zero bias Zero or reverse bias Forward bias Reverse bias Zero bias Zero or reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Diffusion of holes Drift of holes Diffusion of electrons Drift of electrons Diffusion of holes Drift of holes Diffusion of electrons Drift of electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows For full cycle For less than fourth cycle Only for the positive half cycle of the input signal Only for the negative half cycle of the input signal For full cycle For less than fourth cycle Only for the positive half cycle of the input signal Only for the negative half cycle of the input signal ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS