Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Metals All of these Insulators Semiconductors Metals All of these Insulators Semiconductors ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally Either of the above Germanium diodes None of these Silicon diodes Either of the above Germanium diodes None of these Silicon diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons increases The number of free electrons and holes increase but not by the same amount The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons increases The number of free electrons and holes increase but not by the same amount The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? Ferroelectric characteristic only above the curie point High dielectric constant Electric dipole moment No hysteresis Ferroelectric characteristic only above the curie point High dielectric constant Electric dipole moment No hysteresis ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed half the breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
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