Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Insulators Semiconductors All of these Metals Insulators Semiconductors All of these Metals ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally Either of the above Germanium diodes Silicon diodes None of these Either of the above Germanium diodes Silicon diodes None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? No hysteresis Ferroelectric characteristic only above the curie point High dielectric constant Electric dipole moment No hysteresis Ferroelectric characteristic only above the curie point High dielectric constant Electric dipole moment ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Tunnel diode Schottky diode Zener diode PIN diode Tunnel diode Schottky diode Zener diode PIN diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Zero bias Forward bias Reverse bias Zero or reverse bias Zero bias Forward bias Reverse bias Zero or reverse bias ANSWER DOWNLOAD EXAMIANS APP
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