Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Reverse bias Forward bias Zero or reverse bias Zero bias Reverse bias Forward bias Zero or reverse bias Zero bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 2 eV 10 eV 5 eV 0.78 eV 2 eV 10 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits If too large current passes through the diode Diode will emit light All electrons will leave Excessive heat may damage the diode All holes will freeze Diode will emit light All electrons will leave Excessive heat may damage the diode All holes will freeze ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In the sale of diamonds the unit of weight is carat. One carat is equal to 200 mg 100 mg 500 mg 150 mg 200 mg 100 mg 500 mg 150 mg ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface. False True False True ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS