Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Forward bias Zero or reverse bias Zero bias Reverse bias Forward bias Zero or reverse bias Zero bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage None of these Potential barrier Rate of thermal generation of electron hole pairs Forward bias voltage None of these Potential barrier Rate of thermal generation of electron hole pairs ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally None of these Silicon diodes Germanium diodes Either of the above None of these Silicon diodes Germanium diodes Either of the above ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following could be the maximum current rating of junction diode by 126? 100 A 10 A 20 A 1 A 100 A 10 A 20 A 1 A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 2 eV 5 eV 0.78 eV 10 eV 2 eV 5 eV 0.78 eV ANSWER DOWNLOAD EXAMIANS APP
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