Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Forward bias Zero or reverse bias Zero bias Reverse bias Forward bias Zero or reverse bias Zero bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Insulators Metals All of these Semiconductors Insulators Metals All of these Semiconductors ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is Antiparallel to magnetic field In arbitrary direction In the direction of current Normal to both current and magnetic field Antiparallel to magnetic field In arbitrary direction In the direction of current Normal to both current and magnetic field ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Increases with heavy doping Is increased under reverse bias Decreases with light doping Is independent of applied voltage Increases with heavy doping Is increased under reverse bias Decreases with light doping Is independent of applied voltage ANSWER DOWNLOAD EXAMIANS APP
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