Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Forward bias Zero bias Reverse bias Zero or reverse bias Forward bias Zero bias Reverse bias Zero or reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 5 eV 2 eV 0.78 eV 10 eV 5 eV 2 eV 0.78 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Highly doped semiconductor Either A or B Lightly doped semiconductor Intrinsic semiconductor Highly doped semiconductor Either A or B Lightly doped semiconductor Intrinsic semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A A is false but R is true Both A and R are true and R is correct explanation of A A is true but R is false Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority carriers in both regions Free electrons in N-region only Majority as well as minority carriers in both regions Holes in P-region only Majority carriers in both regions Free electrons in N-region only Majority as well as minority carriers in both regions Holes in P-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is An indirect band gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor Wideband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
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