Electronic Devices and Circuits The amount of photoelectric emission current depends on Frequency of incident radiation Both frequency and intensity of incident radiation None of these Intensity of incident radiation Frequency of incident radiation Both frequency and intensity of incident radiation None of these Intensity of incident radiation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is None of these Mixture of silicon and germanium Germanium Silicon None of these Mixture of silicon and germanium Germanium Silicon ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 2 eV 5 eV 0.78 eV 10 eV 2 eV 5 eV 0.78 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows Only for the positive half cycle of the input signal For less than fourth cycle For full cycle Only for the negative half cycle of the input signal Only for the positive half cycle of the input signal For less than fourth cycle For full cycle Only for the negative half cycle of the input signal ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Diffusion of holes Drift of electrons Drift of holes Diffusion of electrons Diffusion of holes Drift of electrons Drift of holes Diffusion of electrons ANSWER DOWNLOAD EXAMIANS APP
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