Electronic Devices and Circuits The amount of photoelectric emission current depends on None of these Frequency of incident radiation Intensity of incident radiation Both frequency and intensity of incident radiation None of these Frequency of incident radiation Intensity of incident radiation Both frequency and intensity of incident radiation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The sensitivity of human eyes is maximum at Violet portion of spectrum Red portion of spectrum Green portion of spectrum White portion of spectrum Violet portion of spectrum Red portion of spectrum Green portion of spectrum White portion of spectrum ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Reverse bias Zero bias Zero or forward bias Forward bias Reverse bias Zero bias Zero or forward bias Forward bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Metals All of these Insulators Semiconductors Metals All of these Insulators Semiconductors ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by None Diffusion process Evaporation Oxidation None Diffusion process Evaporation Oxidation ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS