Electronic Devices and Circuits The amount of photoelectric emission current depends on Intensity of incident radiation Frequency of incident radiation None of these Both frequency and intensity of incident radiation Intensity of incident radiation Frequency of incident radiation None of these Both frequency and intensity of incident radiation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Forward bias Zero or reverse bias Reverse bias Zero bias Forward bias Zero or reverse bias Reverse bias Zero bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Diffusion of holes Diffusion of electrons Drift of holes Drift of electrons Diffusion of holes Diffusion of electrons Drift of holes Drift of electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage None of these Rate of thermal generation of electron hole pairs Potential barrier Forward bias voltage None of these Rate of thermal generation of electron hole pairs Potential barrier ANSWER DOWNLOAD EXAMIANS APP
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