Electronic Devices and Circuits When avalanche breakdown occurs covalent bonds are not affected. False True False True ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 5 eV 10 eV 0.78 eV 2 eV 5 eV 10 eV 0.78 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally None of these Either of the above Silicon diodes Germanium diodes None of these Either of the above Silicon diodes Germanium diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? PIN diode Tunnel diode Zener diode Schottky diode PIN diode Tunnel diode Zener diode Schottky diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Forward bias Zero or reverse bias Zero bias Reverse bias Forward bias Zero or reverse bias Zero bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
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