Electronic Devices and Circuits When avalanche breakdown occurs covalent bonds are not affected. False True False True ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Electrons Ions Holes and electrons Holes Electrons Ions Holes and electrons Holes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Is independent of applied voltage Decreases with light doping Is increased under reverse bias Increases with heavy doping Is independent of applied voltage Decreases with light doping Is increased under reverse bias Increases with heavy doping ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Zener diode Schottky diode Tunnel diode PIN diode Zener diode Schottky diode Tunnel diode PIN diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed half the breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
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