Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not a correct explanation of A

A is false but R is true

A is true but R is false

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not a correct explanation of A

A is false but R is true

A is true but R is false

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Electronic Devices and Circuits
In the sale of diamonds the unit of weight is carat. One carat is equal to

150 mg

500 mg

200 mg

100 mg

150 mg

500 mg

200 mg

100 mg

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Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

The number of free electrons and holes increase by the same amount

The number of free electrons and holes increase but not by the same amount

The number of free electrons increases but the number of holes decreases

The number of free electrons increases

The number of free electrons and holes increase by the same amount

The number of free electrons and holes increase but not by the same amount

The number of free electrons increases but the number of holes decreases

The number of free electrons increases

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Electronic Devices and Circuits
When avalanche breakdown occurs covalent bonds are not affected.

False

True

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Electronic Devices and Circuits
As compared to bipolar junction transistor, a FET

Has better thermal stability

All of these

Has higher input resistance

Is less noisy

Has better thermal stability

All of these

Has higher input resistance

Is less noisy

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Electronic Devices and Circuits
If too large current passes through the diode

Diode will emit light

Excessive heat may damage the diode

All holes will freeze

All electrons will leave

Diode will emit light

Excessive heat may damage the diode

All holes will freeze

All electrons will leave

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Electronic Devices and Circuits

Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Electronic Devices and Circuits In the sale of diamonds the unit of weight is carat. One carat is equal to

Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

Electronic Devices and Circuits When avalanche breakdown occurs covalent bonds are not affected.

Electronic Devices and Circuits As compared to bipolar junction transistor, a FET

Electronic Devices and Circuits If too large current passes through the diode

Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Electronic Devices and Circuits
In the sale of diamonds the unit of weight is carat. One carat is equal to

Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

Electronic Devices and Circuits
When avalanche breakdown occurs covalent bonds are not affected.

Electronic Devices and Circuits
As compared to bipolar junction transistor, a FET

Electronic Devices and Circuits
If too large current passes through the diode