Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Both A and R are true but R is not a correct explanation of A

A is false but R is true

A is true but R is false

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not a correct explanation of A

A is false but R is true

A is true but R is false

Both A and R are true and R is correct explanation of A

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Electronic Devices and Circuits
For a P-N diode, the number of minority carriers crossing the junction depends on

Rate of thermal generation of electron hole pairs

None of these

Forward bias voltage

Potential barrier

Rate of thermal generation of electron hole pairs

None of these

Forward bias voltage

Potential barrier

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Electronic Devices and Circuits
Fermi level is the amount of energy in which

An electron can have at room temperature

A hole can have at room temperature

Must be given to an electron move to conduction band

None of these

An electron can have at room temperature

A hole can have at room temperature

Must be given to an electron move to conduction band

None of these

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Electronic Devices and Circuits
Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant.

A is true but R is false

Both A and R are true but R is not a correct explanation of A

A is false but R is true

Both A and R are true and R is correct explanation of A

A is true but R is false

Both A and R are true but R is not a correct explanation of A

A is false but R is true

Both A and R are true and R is correct explanation of A

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Electronic Devices and Circuits
For a NPN bipolar transistor, what is the main stream of current in the base region?

Diffusion of electrons

Diffusion of holes

Drift of holes

Drift of electrons

Diffusion of electrons

Diffusion of holes

Drift of holes

Drift of electrons

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Electronic Devices and Circuits
As compared to bipolar junction transistor, a FET

All of these

Has higher input resistance

Is less noisy

Has better thermal stability

All of these

Has higher input resistance

Is less noisy

Has better thermal stability

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Electronic Devices and Circuits

Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on

Electronic Devices and Circuits Fermi level is the amount of energy in which

Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant.

Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region?

Electronic Devices and Circuits As compared to bipolar junction transistor, a FET

Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Electronic Devices and Circuits
For a P-N diode, the number of minority carriers crossing the junction depends on

Electronic Devices and Circuits
Fermi level is the amount of energy in which

Electronic Devices and Circuits
Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant.

Electronic Devices and Circuits
For a NPN bipolar transistor, what is the main stream of current in the base region?

Electronic Devices and Circuits
As compared to bipolar junction transistor, a FET