Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

A is false but R is true
A is true but R is false
Both A and R are true but R is not a correct explanation of A
Both A and R are true and R is correct explanation of A

ANSWER DOWNLOAD EXAMIANS APP

Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

Only a saturation region
An ohmic region at low voltage value followed by a saturation region at higher voltages
An ohmic region at large voltage values preceded by a saturation region at lower voltages
Only an ohmic region

ANSWER DOWNLOAD EXAMIANS APP

Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

The number of free electrons and holes increase by the same amount
The number of free electrons increases
The number of free electrons increases but the number of holes decreases
The number of free electrons and holes increase but not by the same amount

ANSWER DOWNLOAD EXAMIANS APP
MORE MCQ ON Electronic Devices and Circuits