Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

A is true but R is false

Both A and R are true and R is correct explanation of A

A is false but R is true

Both A and R are true but R is not a correct explanation of A

A is true but R is false

Both A and R are true and R is correct explanation of A

A is false but R is true

Both A and R are true but R is not a correct explanation of A

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Electronic Devices and Circuits
Which one of the following is not a characteristic of a ferroelectric material?

No hysteresis

High dielectric constant

Ferroelectric characteristic only above the curie point

Electric dipole moment

No hysteresis

High dielectric constant

Ferroelectric characteristic only above the curie point

Electric dipole moment

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Electronic Devices and Circuits
The forbidden energy gap between the valence band and conduction band will be least in case of

All of these

Metals

Semiconductors

Insulators

All of these

Metals

Semiconductors

Insulators

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Electronic Devices and Circuits
Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

True

False

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Electronic Devices and Circuits
Silicon is not suitable for fabrication of light emitting diodes because it is

Narrowband gap semiconductor

Wideband gap semiconductor

Direct band gap semiconductor

An indirect band gap semiconductor

Narrowband gap semiconductor

Wideband gap semiconductor

Direct band gap semiconductor

An indirect band gap semiconductor

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Electronic Devices and Circuits
For a NPN bipolar transistor, what is the main stream of current in the base region?

Drift of electrons

Diffusion of holes

Drift of holes

Diffusion of electrons

Drift of electrons

Diffusion of holes

Drift of holes

Diffusion of electrons

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Electronic Devices and Circuits

Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material?

Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of

Electronic Devices and Circuits Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is

Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region?

Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Electronic Devices and Circuits
Which one of the following is not a characteristic of a ferroelectric material?

Electronic Devices and Circuits
The forbidden energy gap between the valence band and conduction band will be least in case of

Electronic Devices and Circuits
Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

Electronic Devices and Circuits
Silicon is not suitable for fabrication of light emitting diodes because it is

Electronic Devices and Circuits
For a NPN bipolar transistor, what is the main stream of current in the base region?