Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

Electronic Devices and Circuits
Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

Both A and R are true but R is not a correct explanation of A

A is false but R is true

Both A and R are true and R is correct explanation of A

A is true but R is false

Both A and R are true but R is not a correct explanation of A

A is false but R is true

Both A and R are true and R is correct explanation of A

A is true but R is false

ANSWER DOWNLOAD EXAMIANS APP

Electronic Devices and Circuits
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

should not exceed one third the breakdown voltage

may be equal to or less than breakdown voltage

should not exceed half the breakdown voltage

should not exceed the breakdown voltage

should not exceed one third the breakdown voltage

may be equal to or less than breakdown voltage

should not exceed half the breakdown voltage

should not exceed the breakdown voltage

ANSWER DOWNLOAD EXAMIANS APP

Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

Only an ohmic region

An ohmic region at large voltage values preceded by a saturation region at lower voltages

Only a saturation region

An ohmic region at low voltage value followed by a saturation region at higher voltages

Only an ohmic region

An ohmic region at large voltage values preceded by a saturation region at lower voltages

Only a saturation region

An ohmic region at low voltage value followed by a saturation region at higher voltages

ANSWER DOWNLOAD EXAMIANS APP

Electronic Devices and Circuits
In a bipolar transistor, the base collector junction has

Zero bias

Reverse bias

Zero or forward bias

Forward bias

Zero bias

Reverse bias

Zero or forward bias

Forward bias

ANSWER DOWNLOAD EXAMIANS APP

Electronic Devices and Circuits
An electron in the conduction band

Has lower energy than the electron in the valence band

Has higher energy than the electron in the valence band

Jumps to the top of the crystal

Loses its charge easily

Has lower energy than the electron in the valence band

Has higher energy than the electron in the valence band

Jumps to the top of the crystal

Loses its charge easily

ANSWER DOWNLOAD EXAMIANS APP

Electronic Devices and Circuits
When avalanche breakdown occurs covalent bonds are not affected.

True

False

ANSWER DOWNLOAD EXAMIANS APP

Electronic Devices and Circuits

Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has

Electronic Devices and Circuits In a bipolar transistor, the base collector junction has

Electronic Devices and Circuits An electron in the conduction band

Electronic Devices and Circuits When avalanche breakdown occurs covalent bonds are not affected.

Electronic Devices and Circuits
Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

Electronic Devices and Circuits
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

Electronic Devices and Circuits
In a bipolar transistor, the base collector junction has

Electronic Devices and Circuits
An electron in the conduction band

Electronic Devices and Circuits
When avalanche breakdown occurs covalent bonds are not affected.