Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

Electronic Devices and Circuits
Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not a correct explanation of A

A is true but R is false

A is false but R is true

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not a correct explanation of A

A is true but R is false

A is false but R is true

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Electronic Devices and Circuits
Permalloy is

A variety of stainless steel

A conon-ferrous alloy used in aircraft industry

A nickel an iron alloy having high permeability

A polymer

A variety of stainless steel

A conon-ferrous alloy used in aircraft industry

A nickel an iron alloy having high permeability

A polymer

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Electronic Devices and Circuits
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

may be equal to or less than breakdown voltage

should not exceed one third the breakdown voltage

should not exceed the breakdown voltage

should not exceed half the breakdown voltage

may be equal to or less than breakdown voltage

should not exceed one third the breakdown voltage

should not exceed the breakdown voltage

should not exceed half the breakdown voltage

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Electronic Devices and Circuits
The depletion layer width of Junction

Is independent of applied voltage

Decreases with light doping

Increases with heavy doping

Is increased under reverse bias

Is independent of applied voltage

Decreases with light doping

Increases with heavy doping

Is increased under reverse bias

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Electronic Devices and Circuits
Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

True

False

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Electronic Devices and Circuits
Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant.

A is false but R is true

A is true but R is false

Both A and R are true but R is not a correct explanation of A

Both A and R are true and R is correct explanation of A

A is false but R is true

A is true but R is false

Both A and R are true but R is not a correct explanation of A

Both A and R are true and R is correct explanation of A

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Electronic Devices and Circuits

Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

Electronic Devices and Circuits Permalloy is

Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

Electronic Devices and Circuits The depletion layer width of Junction

Electronic Devices and Circuits Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant.

Electronic Devices and Circuits
Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

Electronic Devices and Circuits
Permalloy is

Electronic Devices and Circuits
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

Electronic Devices and Circuits
The depletion layer width of Junction

Electronic Devices and Circuits
Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

Electronic Devices and Circuits
Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant.