Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

Electronic Devices and Circuits
Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

A is false but R is true

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not a correct explanation of A

A is true but R is false

A is false but R is true

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not a correct explanation of A

A is true but R is false

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Electronic Devices and Circuits
At room temperature the current in an intrinsic semiconductor is due to

Electrons

Holes and electrons

Ions

Holes

Electrons

Holes and electrons

Ions

Holes

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Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

The number of free electrons increases but the number of holes decreases

The number of free electrons and holes increase but not by the same amount

The number of free electrons and holes increase by the same amount

The number of free electrons increases

The number of free electrons increases but the number of holes decreases

The number of free electrons and holes increase but not by the same amount

The number of free electrons and holes increase by the same amount

The number of free electrons increases

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Electronic Devices and Circuits
An electron in the conduction band

Jumps to the top of the crystal

Has higher energy than the electron in the valence band

Loses its charge easily

Has lower energy than the electron in the valence band

Jumps to the top of the crystal

Has higher energy than the electron in the valence band

Loses its charge easily

Has lower energy than the electron in the valence band

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Electronic Devices and Circuits
In monolithic ICs, all the components are fabricated by

Oxidation

Evaporation

None

Diffusion process

Oxidation

Evaporation

None

Diffusion process

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Electronic Devices and Circuits
Light dependent resistors are

Highly doped semiconductor

Either A or B

Intrinsic semiconductor

Lightly doped semiconductor

Highly doped semiconductor

Either A or B

Intrinsic semiconductor

Lightly doped semiconductor

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Electronic Devices and Circuits

Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to

Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

Electronic Devices and Circuits An electron in the conduction band

Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by

Electronic Devices and Circuits Light dependent resistors are

Electronic Devices and Circuits
Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers.

Electronic Devices and Circuits
At room temperature the current in an intrinsic semiconductor is due to

Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

Electronic Devices and Circuits
An electron in the conduction band

Electronic Devices and Circuits
In monolithic ICs, all the components are fabricated by

Electronic Devices and Circuits
Light dependent resistors are