Electronic Devices and Circuits
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

should not exceed half the breakdown voltage
may be equal to or less than breakdown voltage
should not exceed the breakdown voltage
should not exceed one third the breakdown voltage

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Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

A is false but R is true
Both A and R are true but R is not a correct explanation of A
A is true but R is false
Both A and R are true and R is correct explanation of A

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Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

Only an ohmic region
Only a saturation region
An ohmic region at low voltage value followed by a saturation region at higher voltages
An ohmic region at large voltage values preceded by a saturation region at lower voltages

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Electronic Devices and Circuits
Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant.

A is true but R is false
A is false but R is true
Both A and R are true but R is not a correct explanation of A
Both A and R are true and R is correct explanation of A

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