Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Reverse bias Zero or forward bias Forward bias Zero bias Reverse bias Zero or forward bias Forward bias Zero bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In the sale of diamonds the unit of weight is carat. One carat is equal to 200 mg 150 mg 100 mg 500 mg 200 mg 150 mg 100 mg 500 mg ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Intrinsic semiconductor Lightly doped semiconductor Either A or B Highly doped semiconductor Intrinsic semiconductor Lightly doped semiconductor Either A or B Highly doped semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed one third the breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true Both A and R are true but R is not a correct explanation of A A is true but R is false Both A and R are true and R is correct explanation of A A is false but R is true Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors Metals Insulators All of these Semiconductors Metals Insulators All of these ANSWER DOWNLOAD EXAMIANS APP
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