Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Zero bias Zero or forward bias Forward bias Reverse bias Zero bias Zero or forward bias Forward bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows For less than fourth cycle Only for the positive half cycle of the input signal Only for the negative half cycle of the input signal For full cycle For less than fourth cycle Only for the positive half cycle of the input signal Only for the negative half cycle of the input signal For full cycle ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which variety of copper has the best conductivity? Pure annealed copper Hard drawn copper Induction hardened copper Copper containing traces of silicon Pure annealed copper Hard drawn copper Induction hardened copper Copper containing traces of silicon ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Direct band gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
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