Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Zero bias Zero or forward bias Reverse bias Forward bias Zero bias Zero or forward bias Reverse bias Forward bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following could be the maximum current rating of junction diode by 126? 1 A 20 A 10 A 100 A 1 A 20 A 10 A 100 A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Narrowband gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor Direct band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET All of these Is less noisy Has higher input resistance Has better thermal stability All of these Is less noisy Has higher input resistance Has better thermal stability ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at large voltage values preceded by a saturation region at lower voltages An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region Only a saturation region An ohmic region at large voltage values preceded by a saturation region at lower voltages An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region Only a saturation region ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When avalanche breakdown occurs covalent bonds are not affected. True False True False ANSWER DOWNLOAD EXAMIANS APP
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