Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Zero or forward bias Forward bias Zero bias Reverse bias Zero or forward bias Forward bias Zero bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Holes and electrons Ions Electrons Holes Holes and electrons Ions Electrons Holes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has better thermal stability Is less noisy All of these Has higher input resistance Has better thermal stability Is less noisy All of these Has higher input resistance ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Increases with heavy doping Decreases with light doping Is independent of applied voltage Is increased under reverse bias Increases with heavy doping Decreases with light doping Is independent of applied voltage Is increased under reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 2 eV 5 eV 0.78 eV 10 eV 2 eV 5 eV 0.78 eV ANSWER DOWNLOAD EXAMIANS APP
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