Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Zero bias Reverse bias Zero or forward bias Forward bias Zero bias Reverse bias Zero or forward bias Forward bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Potential barrier Rate of thermal generation of electron hole pairs Forward bias voltage None of these Potential barrier Rate of thermal generation of electron hole pairs Forward bias voltage None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Free electrons exist in Third band First band Second band Conduction band Third band First band Second band Conduction band ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Increases with heavy doping Is independent of applied voltage Is increased under reverse bias Decreases with light doping Increases with heavy doping Is independent of applied voltage Is increased under reverse bias Decreases with light doping ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Ions Holes and electrons Electrons Holes Ions Holes and electrons Electrons Holes ANSWER DOWNLOAD EXAMIANS APP
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