Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Zero bias Reverse bias Zero or forward bias Forward bias Zero bias Reverse bias Zero or forward bias Forward bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET All of these Is less noisy Has higher input resistance Has better thermal stability All of these Is less noisy Has higher input resistance Has better thermal stability ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Narrowband gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 5 eV 2 eV 10 eV 0.78 eV 5 eV 2 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Permalloy is A variety of stainless steel A nickel an iron alloy having high permeability A conon-ferrous alloy used in aircraft industry A polymer A variety of stainless steel A nickel an iron alloy having high permeability A conon-ferrous alloy used in aircraft industry A polymer ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority as well as minority carriers in both regions Holes in P-region only Free electrons in N-region only Majority carriers in both regions Majority as well as minority carriers in both regions Holes in P-region only Free electrons in N-region only Majority carriers in both regions ANSWER DOWNLOAD EXAMIANS APP
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