Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Forward bias Zero or forward bias Zero bias Reverse bias Forward bias Zero or forward bias Zero bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows Only for the positive half cycle of the input signal For less than fourth cycle Only for the negative half cycle of the input signal For full cycle Only for the positive half cycle of the input signal For less than fourth cycle Only for the negative half cycle of the input signal For full cycle ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons increases The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase by the same amount The number of free electrons and holes increase but not by the same amount The number of free electrons increases The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase by the same amount The number of free electrons and holes increase but not by the same amount ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface. True False True False ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has Only an ohmic region Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages An ohmic region at large voltage values preceded by a saturation region at lower voltages Only an ohmic region Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages An ohmic region at large voltage values preceded by a saturation region at lower voltages ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 5 eV 2 eV 10 eV 0.78 eV 5 eV 2 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
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