Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Zero or forward bias Reverse bias Forward bias Zero bias Zero or forward bias Reverse bias Forward bias Zero bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of All of these Insulators Metals Semiconductors All of these Insulators Metals Semiconductors ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows For full cycle Only for the positive half cycle of the input signal Only for the negative half cycle of the input signal For less than fourth cycle For full cycle Only for the positive half cycle of the input signal Only for the negative half cycle of the input signal For less than fourth cycle ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has better thermal stability All of these Has higher input resistance Is less noisy Has better thermal stability All of these Has higher input resistance Is less noisy ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on Intensity of incident radiation Both frequency and intensity of incident radiation Frequency of incident radiation None of these Intensity of incident radiation Both frequency and intensity of incident radiation Frequency of incident radiation None of these ANSWER DOWNLOAD EXAMIANS APP
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