Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Forward bias Zero or forward bias Reverse bias Zero bias Forward bias Zero or forward bias Reverse bias Zero bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors Metals All of these Insulators Semiconductors Metals All of these Insulators ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Zero or reverse bias Forward bias Zero bias Reverse bias Zero or reverse bias Forward bias Zero bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally None of these Germanium diodes Either of the above Silicon diodes None of these Germanium diodes Either of the above Silicon diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When avalanche breakdown occurs covalent bonds are not affected. True False True False ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Potential barrier Forward bias voltage Rate of thermal generation of electron hole pairs None of these Potential barrier Forward bias voltage Rate of thermal generation of electron hole pairs None of these ANSWER DOWNLOAD EXAMIANS APP
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