Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Oxidation Diffusion process Evaporation None Oxidation Diffusion process Evaporation None ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 2 eV 5 eV 10 eV 0.78 eV 2 eV 5 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Schottky diode PIN diode Zener diode Tunnel diode Schottky diode PIN diode Zener diode Tunnel diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Zero or forward bias Forward bias Zero bias Reverse bias Zero or forward bias Forward bias Zero bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface. True False True False ANSWER DOWNLOAD EXAMIANS APP
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