Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

An ohmic region at low voltage value followed by a saturation region at higher voltages
Only an ohmic region
Only a saturation region
An ohmic region at large voltage values preceded by a saturation region at lower voltages

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Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

A is false but R is true
Both A and R are true but R is not a correct explanation of A
A is true but R is false
Both A and R are true and R is correct explanation of A

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