Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 100 1.01 0.99 99 100 1.01 0.99 99 ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at large voltage values preceded by a saturation region at lower voltages Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages Only a saturation region An ohmic region at low voltage value followed by a saturation region at higher voltages Only an ohmic region ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Drift of electrons Diffusion of electrons Drift of holes Diffusion of holes Drift of electrons Diffusion of electrons Drift of holes Diffusion of holes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The amount of photoelectric emission current depends on Frequency of incident radiation Intensity of incident radiation Both frequency and intensity of incident radiation None of these Frequency of incident radiation Intensity of incident radiation Both frequency and intensity of incident radiation None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Potential barrier None of these Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs Forward bias voltage ANSWER DOWNLOAD EXAMIANS APP
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