Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is An indirect band gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is In arbitrary direction Antiparallel to magnetic field Normal to both current and magnetic field In the direction of current In arbitrary direction Antiparallel to magnetic field Normal to both current and magnetic field In the direction of current ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase but not by the same amount The number of free electrons increases The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase but not by the same amount The number of free electrons increases ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages An ohmic region at large voltage values preceded by a saturation region at lower voltages Only a saturation region Only an ohmic region An ohmic region at low voltage value followed by a saturation region at higher voltages An ohmic region at large voltage values preceded by a saturation region at lower voltages Only a saturation region ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Electrons Holes Ions Holes and electrons Electrons Holes Ions Holes and electrons ANSWER DOWNLOAD EXAMIANS APP
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