Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Wideband gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 99 1.01 100 0.99 99 1.01 100 0.99 ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is false but R is true A is true but R is false Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Diffusion of holes Drift of electrons Diffusion of electrons Drift of holes Diffusion of holes Drift of electrons Diffusion of electrons Drift of holes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When avalanche breakdown occurs covalent bonds are not affected. True False True False ANSWER DOWNLOAD EXAMIANS APP
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