Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 10 eV 0.78 eV 5 eV 2 eV 10 eV 0.78 eV 5 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following has highest resistivity? Air Mica Paraffin wax Mineral oil Air Mica Paraffin wax Mineral oil ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Is increased under reverse bias Increases with heavy doping Decreases with light doping Is independent of applied voltage Is increased under reverse bias Increases with heavy doping Decreases with light doping Is independent of applied voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 1.01 0.99 100 99 1.01 0.99 100 99 ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS