Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor An indirect band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? No hysteresis High dielectric constant Electric dipole moment Ferroelectric characteristic only above the curie point No hysteresis High dielectric constant Electric dipole moment Ferroelectric characteristic only above the curie point ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases. Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 10 eV 2 eV 5 eV 0.78 eV 10 eV 2 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Power diodes are generally Silicon diodes None of these Either of the above Germanium diodes Silicon diodes None of these Either of the above Germanium diodes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Insulators Metals All of these Semiconductors Insulators Metals All of these Semiconductors ANSWER DOWNLOAD EXAMIANS APP
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