Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Wideband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Free electrons in N-region only Majority as well as minority carriers in both regions Holes in P-region only Majority carriers in both regions Free electrons in N-region only Majority as well as minority carriers in both regions Holes in P-region only Majority carriers in both regions ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Insulators Semiconductors Metals All of these Insulators Semiconductors Metals All of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? No hysteresis Ferroelectric characteristic only above the curie point High dielectric constant Electric dipole moment No hysteresis Ferroelectric characteristic only above the curie point High dielectric constant Electric dipole moment ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage Rate of thermal generation of electron hole pairs Potential barrier None of these Forward bias voltage Rate of thermal generation of electron hole pairs Potential barrier None of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Germanium Mixture of silicon and germanium None of these Silicon Germanium Mixture of silicon and germanium None of these Silicon ANSWER DOWNLOAD EXAMIANS APP
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