Electronic Devices and Circuits
Silicon is not suitable for fabrication of light emitting diodes because it is

An indirect band gap semiconductor
Wideband gap semiconductor
Direct band gap semiconductor
Narrowband gap semiconductor

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Electronic Devices and Circuits
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

should not exceed one third the breakdown voltage
should not exceed half the breakdown voltage
should not exceed the breakdown voltage
may be equal to or less than breakdown voltage

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Electronic Devices and Circuits
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.

Both A and R are true and R is correct explanation of A
A is false but R is true
A is true but R is false
Both A and R are true but R is not a correct explanation of A

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