Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is An indirect band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor Direct band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors Metals All of these Insulators Semiconductors Metals All of these Insulators ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Tunnel diode Zener diode Schottky diode PIN diode Tunnel diode Zener diode Schottky diode PIN diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Rate of thermal generation of electron hole pairs None of these Potential barrier Forward bias voltage Rate of thermal generation of electron hole pairs None of these Potential barrier Forward bias voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Lightly doped semiconductor Intrinsic semiconductor Highly doped semiconductor Either A or B Lightly doped semiconductor Intrinsic semiconductor Highly doped semiconductor Either A or B ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows Only for the negative half cycle of the input signal For full cycle Only for the positive half cycle of the input signal For less than fourth cycle Only for the negative half cycle of the input signal For full cycle Only for the positive half cycle of the input signal For less than fourth cycle ANSWER DOWNLOAD EXAMIANS APP
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