Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Narrowband gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Holes and electrons Holes Electrons Ions Holes and electrons Holes Electrons Ions ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Zero or forward bias Zero bias Forward bias Reverse bias Zero or forward bias Zero bias Forward bias Reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? Electric dipole moment Ferroelectric characteristic only above the curie point No hysteresis High dielectric constant Electric dipole moment Ferroelectric characteristic only above the curie point No hysteresis High dielectric constant ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Is less noisy Has higher input resistance Has better thermal stability All of these Is less noisy Has higher input resistance Has better thermal stability All of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Is increased under reverse bias Is independent of applied voltage Increases with heavy doping Decreases with light doping Is increased under reverse bias Is independent of applied voltage Increases with heavy doping Decreases with light doping ANSWER DOWNLOAD EXAMIANS APP
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