Electronic Devices and Circuits
Silicon is not suitable for fabrication of light emitting diodes because it is

Wideband gap semiconductor
Direct band gap semiconductor
An indirect band gap semiconductor
Narrowband gap semiconductor

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Electronic Devices and Circuits
When diodes are connected in series to increase voltage rating the peak inverse voltage per junction

should not exceed half the breakdown voltage
should not exceed one third the breakdown voltage
should not exceed the breakdown voltage
may be equal to or less than breakdown voltage

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