Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Narrowband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor An indirect band gap semiconductor Wideband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of All of these Metals Insulators Semiconductors All of these Metals Insulators Semiconductors ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows Only for the positive half cycle of the input signal Only for the negative half cycle of the input signal For full cycle For less than fourth cycle Only for the positive half cycle of the input signal Only for the negative half cycle of the input signal For full cycle For less than fourth cycle ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In the sale of diamonds the unit of weight is carat. One carat is equal to 150 mg 500 mg 100 mg 200 mg 150 mg 500 mg 100 mg 200 mg ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority carriers in both regions Free electrons in N-region only Holes in P-region only Majority as well as minority carriers in both regions Majority carriers in both regions Free electrons in N-region only Holes in P-region only Majority as well as minority carriers in both regions ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Diffusion process Evaporation Oxidation None Diffusion process Evaporation Oxidation None ANSWER DOWNLOAD EXAMIANS APP
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