Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is An indirect band gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a NPN bipolar transistor, what is the main stream of current in the base region? Drift of electrons Diffusion of electrons Drift of holes Diffusion of holes Drift of electrons Diffusion of electrons Drift of holes Diffusion of holes ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Schottky diode Tunnel diode PIN diode Zener diode Schottky diode Tunnel diode PIN diode Zener diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Forward bias Zero or forward bias Reverse bias Zero bias Forward bias Zero or forward bias Reverse bias Zero bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The most commonly used semiconductor material is Germanium None of these Silicon Mixture of silicon and germanium Germanium None of these Silicon Mixture of silicon and germanium ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 5 eV 10 eV 0.78 eV 2 eV 5 eV 10 eV 0.78 eV 2 eV ANSWER DOWNLOAD EXAMIANS APP
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