Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Holes and electrons Ions Holes Electrons Holes and electrons Ions Holes Electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority carriers in both regions Majority as well as minority carriers in both regions Holes in P-region only Free electrons in N-region only Majority carriers in both regions Majority as well as minority carriers in both regions Holes in P-region only Free electrons in N-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? PIN diode Schottky diode Zener diode Tunnel diode PIN diode Schottky diode Zener diode Tunnel diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following could be the maximum current rating of junction diode by 126? 20 A 100 A 1 A 10 A 20 A 100 A 1 A 10 A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed the breakdown voltage should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs Forward bias voltage Potential barrier None of these Rate of thermal generation of electron hole pairs ANSWER DOWNLOAD EXAMIANS APP
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