Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Ions Holes and electrons Holes Electrons Ions Holes and electrons Holes Electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Metals Insulators Semiconductors All of these Metals Insulators Semiconductors All of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which of the following could be the maximum current rating of junction diode by 126? 20 A 10 A 1 A 100 A 20 A 10 A 1 A 100 A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Is increased under reverse bias Decreases with light doping Increases with heavy doping Is independent of applied voltage Is increased under reverse bias Decreases with light doping Increases with heavy doping Is independent of applied voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The output, V-I characteristics of an Enhancement type MOSFET has An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages An ohmic region at low voltage value followed by a saturation region at higher voltages Only a saturation region Only an ohmic region An ohmic region at large voltage values preceded by a saturation region at lower voltages ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Tunnel diode Zener diode Schottky diode PIN diode Tunnel diode Zener diode Schottky diode PIN diode ANSWER DOWNLOAD EXAMIANS APP
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