Electronic Devices and Circuits At room temperature the current in an intrinsic semiconductor is due to Holes Electrons Ions Holes and electrons Holes Electrons Ions Holes and electrons ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Metals Semiconductors Insulators All of these Metals Semiconductors Insulators All of these ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has better thermal stability All of these Is less noisy Has higher input resistance Has better thermal stability All of these Is less noisy Has higher input resistance ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits An electron in the conduction band Loses its charge easily Has higher energy than the electron in the valence band Jumps to the top of the crystal Has lower energy than the electron in the valence band Loses its charge easily Has higher energy than the electron in the valence band Jumps to the top of the crystal Has lower energy than the electron in the valence band ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on Rate of thermal generation of electron hole pairs Potential barrier None of these Forward bias voltage Rate of thermal generation of electron hole pairs Potential barrier None of these Forward bias voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The depletion layer width of Junction Increases with heavy doping Is increased under reverse bias Is independent of applied voltage Decreases with light doping Increases with heavy doping Is increased under reverse bias Is independent of applied voltage Decreases with light doping ANSWER DOWNLOAD EXAMIANS APP