Electronic Devices and Circuits Which of the following could be the maximum current rating of junction diode by 126? 20 A 10 A 1 A 100 A 20 A 10 A 1 A 100 A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant. A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the base collector junction has Reverse bias Zero bias Zero or forward bias Forward bias Reverse bias Zero bias Zero or forward bias Forward bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A A is true but R is false A is false but R is true Both A and R are true and R is correct explanation of A Both A and R are true but R is not a correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed half the breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits For a P-N diode, the number of minority carriers crossing the junction depends on None of these Forward bias voltage Potential barrier Rate of thermal generation of electron hole pairs None of these Forward bias voltage Potential barrier Rate of thermal generation of electron hole pairs ANSWER DOWNLOAD EXAMIANS APP
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