Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons and holes increase but not by the same amount The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons increases The number of free electrons and holes increase but not by the same amount The number of free electrons and holes increase by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons increases ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction should not exceed half the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed half the breakdown voltage should not exceed the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Fermi level is the amount of energy in which Must be given to an electron move to conduction band None of these A hole can have at room temperature An electron can have at room temperature Must be given to an electron move to conduction band None of these A hole can have at room temperature An electron can have at room temperature ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? Ferroelectric characteristic only above the curie point No hysteresis Electric dipole moment High dielectric constant Ferroelectric characteristic only above the curie point No hysteresis Electric dipole moment High dielectric constant ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a bipolar transistor, the emitter base junction has Reverse bias Forward bias Zero bias Zero or reverse bias Reverse bias Forward bias Zero bias Zero or reverse bias ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
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