Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons increases The number of free electrons and holes increase but not by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase by the same amount The number of free electrons increases The number of free electrons and holes increase but not by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase by the same amount ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Zener diode PIN diode Tunnel diode Schottky diode Zener diode PIN diode Tunnel diode Schottky diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 5 eV 2 eV 10 eV 0.78 eV 5 eV 2 eV 10 eV 0.78 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Free electrons exist in Third band Second band Conduction band First band Third band Second band Conduction band First band ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In monolithic ICs, all the components are fabricated by Diffusion process None Evaporation Oxidation Diffusion process None Evaporation Oxidation ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? Ferroelectric characteristic only above the curie point High dielectric constant Electric dipole moment No hysteresis Ferroelectric characteristic only above the curie point High dielectric constant Electric dipole moment No hysteresis ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS