Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons and holes increase by the same amount The number of free electrons and holes increase but not by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons increases The number of free electrons and holes increase by the same amount The number of free electrons and holes increase but not by the same amount The number of free electrons increases but the number of holes decreases The number of free electrons increases ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed one third the breakdown voltage should not exceed the breakdown voltage should not exceed half the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a half wave rectifier, the load current flows Only for the negative half cycle of the input signal Only for the positive half cycle of the input signal For less than fourth cycle For full cycle Only for the negative half cycle of the input signal Only for the positive half cycle of the input signal For less than fourth cycle For full cycle ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Light dependent resistors are Intrinsic semiconductor Highly doped semiconductor Lightly doped semiconductor Either A or B Intrinsic semiconductor Highly doped semiconductor Lightly doped semiconductor Either A or B ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Zener diode Schottky diode Tunnel diode PIN diode Zener diode Schottky diode Tunnel diode PIN diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is true but R is false A is false but R is true ANSWER DOWNLOAD EXAMIANS APP
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