Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons and holes increase by the same amount The number of free electrons and holes increase but not by the same amount The number of free electrons increases The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase by the same amount The number of free electrons and holes increase but not by the same amount The number of free electrons increases The number of free electrons increases but the number of holes decreases ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In which of these is reverse recovery time nearly zero? Zener diode Schottky diode PIN diode Tunnel diode Zener diode Schottky diode PIN diode Tunnel diode ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is 100 0.99 1.01 99 100 0.99 1.01 99 ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors Metals All of these Insulators Semiconductors Metals All of these Insulators ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits As compared to bipolar junction transistor, a FET Has better thermal stability All of these Has higher input resistance Is less noisy Has better thermal stability All of these Has higher input resistance Is less noisy ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 2 eV 0.78 eV 5 eV 10 eV 2 eV 0.78 eV 5 eV 10 eV ANSWER DOWNLOAD EXAMIANS APP