Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons and holes increase but not by the same amount The number of free electrons and holes increase by the same amount The number of free electrons increases The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase but not by the same amount The number of free electrons and holes increase by the same amount The number of free electrons increases The number of free electrons increases but the number of holes decreases ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? No hysteresis Ferroelectric characteristic only above the curie point High dielectric constant Electric dipole moment No hysteresis Ferroelectric characteristic only above the curie point High dielectric constant Electric dipole moment ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits When diodes are connected in series to increase voltage rating the peak inverse voltage per junction may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage should not exceed half the breakdown voltage may be equal to or less than breakdown voltage should not exceed the breakdown voltage should not exceed one third the breakdown voltage should not exceed half the breakdown voltage ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Direct band gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor Direct band gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Narrowband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Forbidden energy gap in germanium at 0 K is about 0.78 eV 2 eV 10 eV 5 eV 0.78 eV 2 eV 10 eV 5 eV ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): A VMOS can handle much larger current than other field effect transistors.Reason (R): In a VMOS the conducting channel is very narrow. A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A ANSWER DOWNLOAD EXAMIANS APP
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