Electronic Devices and Circuits An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased The number of free electrons increases The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase by the same amount The number of free electrons and holes increase but not by the same amount The number of free electrons increases The number of free electrons increases but the number of holes decreases The number of free electrons and holes increase by the same amount The number of free electrons and holes increase but not by the same amount ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits In a semiconductor diode, the barrier offers opposition to Majority carriers in both regions Holes in P-region only Majority as well as minority carriers in both regions Free electrons in N-region only Majority carriers in both regions Holes in P-region only Majority as well as minority carriers in both regions Free electrons in N-region only ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits The forbidden energy gap between the valence band and conduction band will be least in case of Semiconductors Metals All of these Insulators Semiconductors Metals All of these Insulators ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Silicon is not suitable for fabrication of light emitting diodes because it is Wideband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor Wideband gap semiconductor An indirect band gap semiconductor Direct band gap semiconductor Narrowband gap semiconductor ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Which one of the following is not a characteristic of a ferroelectric material? Ferroelectric characteristic only above the curie point Electric dipole moment No hysteresis High dielectric constant Ferroelectric characteristic only above the curie point Electric dipole moment No hysteresis High dielectric constant ANSWER DOWNLOAD EXAMIANS APP
Electronic Devices and Circuits Assertion (A): In p-n-p transistor collector current is termed negative.Reason (R): In p-n-p transistor holes are majority carriers. Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false Both A and R are true but R is not a correct explanation of A Both A and R are true and R is correct explanation of A A is false but R is true A is true but R is false ANSWER DOWNLOAD EXAMIANS APP
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