Electronic Devices and Circuits
An electron in the conduction band

Jumps to the top of the crystal
Has higher energy than the electron in the valence band
Has lower energy than the electron in the valence band
Loses its charge easily

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Electronic Devices and Circuits
The output, V-I characteristics of an Enhancement type MOSFET has

Only a saturation region
An ohmic region at large voltage values preceded by a saturation region at lower voltages
An ohmic region at low voltage value followed by a saturation region at higher voltages
Only an ohmic region

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Electronic Devices and Circuits
An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

The number of free electrons and holes increase by the same amount
The number of free electrons increases
The number of free electrons increases but the number of holes decreases
The number of free electrons and holes increase but not by the same amount

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