Power Electronics Power transistor are type of MOSFETs. BJTs. IGBTs. All of above. MOSFETs. BJTs. IGBTs. All of above. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The typical time of rising time lies between 10 - 20 µs. 90 - 100 µs. 1 - 4 µs. 40 - 60 µs. 10 - 20 µs. 90 - 100 µs. 1 - 4 µs. 40 - 60 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A single phase full bridge inverter can operate in load commutation mode in case load consists of RLC critically damped. RLC overdamped. RLC underdamped. RL. RLC critically damped. RLC overdamped. RLC underdamped. RL. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During reverse recovery time charge carrier of junction J2 recombined. charge carrier of junction J1 is swept out. charge carrier of junction J3 is swept out. both B and C. charge carrier of junction J2 recombined. charge carrier of junction J1 is swept out. charge carrier of junction J3 is swept out. both B and C. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In forward blocking mode of a thyristor junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? SIT. SITH. GTO. SCR. SIT. SITH. GTO. SCR. ANSWER DOWNLOAD EXAMIANS APP
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