Power Electronics Which of following devices has highest di/dt and dv/dt capability? SIT. SCR. SITH. GTO. SIT. SCR. SITH. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ semiconductor layers Four Two Three None of these Four Two Three None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is not a characteristic of UJT? Intrinsic stand off ratio Peak-point voltage Bilateral conduction Negative resistance Intrinsic stand off ratio Peak-point voltage Bilateral conduction Negative resistance ANSWER DOWNLOAD EXAMIANS APP
Power Electronics By which one of the following we can measure the reliability of a string? Reliability factor. Factor of safety. Derating factor. String efficient. Reliability factor. Factor of safety. Derating factor. String efficient. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics SITH is also known as Filled controlled rectifier. None of these. Silicon controlled rectifier. Filled controlled diode. Filled controlled rectifier. None of these. Silicon controlled rectifier. Filled controlled diode. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In forward blocking mode of a thyristor junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. ANSWER DOWNLOAD EXAMIANS APP
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