Power Electronics Which of following devices has highest di/dt and dv/dt capability? SITH. GTO. SCR. SIT. SITH. GTO. SCR. SIT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Example of a voltage clamping device fast acting fuse. snubber circuit. aluminium block. metal oxide varistor. fast acting fuse. snubber circuit. aluminium block. metal oxide varistor. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Latching current for an SCR inserted between a dc voltage source of 200 V and load is 100 mA. Compute the minimum rate of width pulse required to turn ON the SCR in case load consists of R = 20 Ω in series with L = 0.2 H. 100 µs. 200 µs. 300 µs. 150 µs. 100 µs. 200 µs. 300 µs. 150 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In a P1N1P2N2 thyristor which layer is less doped ? P2. P1. N1. N2. P2. P1. N1. N2. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A triac is equivalent to two SCRs ___________. In series In parallel None of these In inverse-parallel In series In parallel None of these In inverse-parallel ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is not a characteristic of UJT? Intrinsic stand off ratio Negative resistance Bilateral conduction Peak-point voltage Intrinsic stand off ratio Negative resistance Bilateral conduction Peak-point voltage ANSWER DOWNLOAD EXAMIANS APP
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