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Power Electronics

Power Electronics
Which of following devices has highest di/dt and dv/dt capability?

 SITH.
 SCR.
 SIT.
  GTO.

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Power Electronics
Latching current for an SCR inserted between a dc voltage source of 200 V and load is 100 mA. Compute the minimum rate of width pulse required to turn ON the SCR in case load consists of R = 20 Ω in series with L = 0.2 H.

 300 µs.
 200 µs.
 150 µs.
  100 µs.

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Power Electronics
A diac has ___________ terminals.

Three
Four
None of these
Two

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Power Electronics
The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is

 130 μs.
 145 μs.
 140 μs.
  135 μs.

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Power Electronics
In a P1N1P2N2 thyristor which layer is less doped ?

  N1.
 P1.
 P2.
 N2.

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Power Electronics
Thermal voltage VT can be given by

 KT/q.
 (K2/q)(T + 1/T - 1).
  Kq/T.
 qT/K.

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