Power Electronics Which of following devices has highest di/dt and dv/dt capability? SCR. SIT. SITH. GTO. SCR. SIT. SITH. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A thyristor string is made of a no. of SCR connected in series and parallel. The string have volume and current of 11 KV and 4 KA. The voltage and current rating of available SCRs are 1800 V and 1000 A. For a string efficiency of 90 % let the number of SCRs in series and parallel are a and b respectively. Then the value of a and b will be 6, 4. 5, 7. 7, 5. 4, 6. 6, 4. 5, 7. 7, 5. 4, 6. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that does not have the gate terminal is ___________. FET Triac Diac SCR FET Triac Diac SCR ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Rise time is defined by the interval when anode current rises 10 % to 90 % of its final value. gate current rises from 90 % to 100 % of it final value. both B and C. anode voltage drops from 90 % to 10 % of its initial value. anode current rises 10 % to 90 % of its final value. gate current rises from 90 % to 100 % of it final value. both B and C. anode voltage drops from 90 % to 10 % of its initial value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. IGBT. GTO. FCT. MCT. IGBT. GTO. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During which time maximum conduction spreading take place in the thyristor during turn ON? Rise time. Spread time. Delay time. Same for every case. Rise time. Spread time. Delay time. Same for every case. ANSWER DOWNLOAD EXAMIANS APP