Power Electronics Which of following devices has highest di/dt and dv/dt capability? GTO. SCR. SITH. SIT. GTO. SCR. SITH. SIT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What may happen high dV / dt? Both A and B. Breakdown of J2 junction. Unwanted turn ON. Anyone of these. Both A and B. Breakdown of J2 junction. Unwanted turn ON. Anyone of these. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A thyristor string is made of a no. of SCR connected in series and parallel. The string have volume and current of 11 KV and 4 KA. The voltage and current rating of available SCRs are 1800 V and 1000 A. For a string efficiency of 90 % let the number of SCRs in series and parallel are a and b respectively. Then the value of a and b will be 4, 6. 5, 7. 7, 5. 6, 4. 4, 6. 5, 7. 7, 5. 6, 4. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that exhibits negative resistance region is ___________. Transistor Triac Diac UJT Transistor Triac Diac UJT ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is not a characteristic of UJT? Intrinsic stand off ratio Bilateral conduction Negative resistance Peak-point voltage Intrinsic stand off ratio Bilateral conduction Negative resistance Peak-point voltage ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Maximum di / dt in a SCR is directly proportional to Vm of supply voltage. inversely proportional to Vm of supply voltage. both A and C. inversely proportional to L in the circuit. directly proportional to Vm of supply voltage. inversely proportional to Vm of supply voltage. both A and C. inversely proportional to L in the circuit. ANSWER DOWNLOAD EXAMIANS APP
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