Power Electronics Which of following devices has highest di/dt and dv/dt capability? SITH. GTO. SCR. SIT. SITH. GTO. SCR. SIT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. None of these Decreases Increases Remains the same None of these Decreases Increases Remains the same ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that does not have the gate terminal is ___________. Triac FET Diac SCR Triac FET Diac SCR ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Between the peak point and the valley point of UJT emitter characteristics we have ___________ region Negative resistance Cut-off None of these Saturation Negative resistance Cut-off None of these Saturation ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In forward blocking mode of a thyristor junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is disadvantage of fast recovery diodes? Doping is carried out. Recovery is only 5 µs. Recovery is only 50 µs. None of these. Doping is carried out. Recovery is only 5 µs. Recovery is only 50 µs. None of these. ANSWER DOWNLOAD EXAMIANS APP
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