Power Electronics Which of following devices has highest di/dt and dv/dt capability? SIT. SCR. GTO. SITH. SIT. SCR. GTO. SITH. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The latching current of GTO should be of order 1 A. 100 mA. 2 A. 500 mA. 1 A. 100 mA. 2 A. 500 mA. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Snubber circuit is used with SCR either series or parallel. in parallel. in series. anti parallel. either series or parallel. in parallel. in series. anti parallel. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant None of these UJT Transistor SCR None of these UJT Transistor SCR ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In reverse blocking mode of a thyristor junction J3 is in forward bias and J1, J2 in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thermal voltage VT can be given by Kq/T. KT/q. (K2/q)(T + 1/T - 1). qT/K. Kq/T. KT/q. (K2/q)(T + 1/T - 1). qT/K. ANSWER DOWNLOAD EXAMIANS APP
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