Power Electronics Which of following devices has highest di/dt and dv/dt capability? SCR. SITH. SIT. GTO. SCR. SITH. SIT. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During reverse recovery time both B and C. charge carrier of junction J2 recombined. charge carrier of junction J3 is swept out. charge carrier of junction J1 is swept out. both B and C. charge carrier of junction J2 recombined. charge carrier of junction J3 is swept out. charge carrier of junction J1 is swept out. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics SCRs are used in series to meet low current demand. high voltage demand. low voltage demand. high current demand. low current demand. high voltage demand. low voltage demand. high current demand. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A thyristor will be triggered when Vg = 1.5 volt and Ig = 100 mA in the given figure. Calculate the value of R in ohm is 37.14. 60. 3.714. 65. 37.14. 60. 3.714. 65. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of None of these. BJTs and SITs. BJTs and MOSFETs. SITs and MOSFETs. None of these. BJTs and SITs. BJTs and MOSFETs. SITs and MOSFETs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. Decreases Remains the same None of these Increases Decreases Remains the same None of these Increases ANSWER DOWNLOAD EXAMIANS APP
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