Power Electronics Which of following devices has highest di/dt and dv/dt capability? SITH. SCR. SIT. GTO. SITH. SCR. SIT. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Latching current for an SCR inserted between a dc voltage source of 200 V and load is 100 mA. Compute the minimum rate of width pulse required to turn ON the SCR in case load consists of R = 20 Ω in series with L = 0.2 H. 300 µs. 200 µs. 150 µs. 100 µs. 300 µs. 200 µs. 150 µs. 100 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ terminals. Three Four None of these Two Three Four None of these Two ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is 130 μs. 145 μs. 140 μs. 135 μs. 130 μs. 145 μs. 140 μs. 135 μs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In a P1N1P2N2 thyristor which layer is less doped ? N1. P1. P2. N2. N1. P1. P2. N2. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thermal voltage VT can be given by KT/q. (K2/q)(T + 1/T - 1). Kq/T. qT/K. KT/q. (K2/q)(T + 1/T - 1). Kq/T. qT/K. ANSWER DOWNLOAD EXAMIANS APP
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