Power Electronics
The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is

 140 μs.
  135 μs.
 130 μs.
 145 μs.

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Power Electronics
During gate recovery time

 charge carriers of J2 junction is swept out.
  charge carriers of J2 junction recombined.
 charge carriers of J3 junction is removed.
 charge carrier of J1 junction removed.

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