Power Electronics The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is 135 μs. 130 μs. 140 μs. 145 μs. 135 μs. 130 μs. 140 μs. 145 μs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Between the peak point and the valley point of UJT emitter characteristics we have ___________ region Negative resistance Cut-off None of these Saturation Negative resistance Cut-off None of these Saturation ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. None of these Remains the same Decreases Increases None of these Remains the same Decreases Increases ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to High di/dt. Low di/dt. High dv/dt. Low dv/dt. High di/dt. Low di/dt. High dv/dt. Low dv/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Leakage current flows through the thyristor in forward blocking mode. forward conduction mode. reverse blocking mode. both forward and reverse blocking mode. forward blocking mode. forward conduction mode. reverse blocking mode. both forward and reverse blocking mode. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The maximum di/dt in a SCR is Both A and B. Directly proportional to inductance in the circuit. Directly proportional to supply voltage. Inversely proportional to supply voltage. Both A and B. Directly proportional to inductance in the circuit. Directly proportional to supply voltage. Inversely proportional to supply voltage. ANSWER DOWNLOAD EXAMIANS APP
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