Power Electronics If holding current of a thyristor is 2 mA then latching current should be 0.009 A. 0.004 A. 0.002 A. 0.01 A. 0.009 A. 0.004 A. 0.002 A. 0.01 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of BJTs and MOSFETs. None of these. SITs and MOSFETs. BJTs and SITs. BJTs and MOSFETs. None of these. SITs and MOSFETs. BJTs and SITs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In reverse blocking mode of a thyristor junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J3 is in forward bias and J1, J2 in reverse bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? SCR. GTO. SIT. SITH. SCR. GTO. SIT. SITH. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that does not have the gate terminal is ___________. Triac SCR FET Diac Triac SCR FET Diac ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to Low di/dt. Low dv/dt. High di/dt. High dv/dt. Low di/dt. Low dv/dt. High di/dt. High dv/dt. ANSWER DOWNLOAD EXAMIANS APP
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