Power Electronics If holding current of a thyristor is 2 mA then latching current should be 0.002 A. 0.01 A. 0.009 A. 0.004 A. 0.002 A. 0.01 A. 0.009 A. 0.004 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During reverse recovery time charge carrier of junction J2 recombined. charge carrier of junction J1 is swept out. charge carrier of junction J3 is swept out. both B and C. charge carrier of junction J2 recombined. charge carrier of junction J1 is swept out. charge carrier of junction J3 is swept out. both B and C. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt? 1000 V/µs. 800 V/µs. 600 V/µs. 1200 V/µs. 1000 V/µs. 800 V/µs. 600 V/µs. 1200 V/µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Between the peak point and the valley point of UJT emitter characteristics we have ___________ region Negative resistance None of these Cut-off Saturation Negative resistance None of these Cut-off Saturation ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During gate recovery time charge carriers of J2 junction recombined. charge carriers of J2 junction is swept out. charge carrier of J1 junction removed. charge carriers of J3 junction is removed. charge carriers of J2 junction recombined. charge carriers of J2 junction is swept out. charge carrier of J1 junction removed. charge carriers of J3 junction is removed. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is disadvantage of fast recovery diodes? Recovery is only 50 µs. None of these. Recovery is only 5 µs. Doping is carried out. Recovery is only 50 µs. None of these. Recovery is only 5 µs. Doping is carried out. ANSWER DOWNLOAD EXAMIANS APP
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