Power Electronics If holding current of a thyristor is 2 mA then latching current should be 0.009 A. 0.004 A. 0.01 A. 0.002 A. 0.009 A. 0.004 A. 0.01 A. 0.002 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. FCT. GTO. IGBT. MCT. FCT. GTO. IGBT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Under over voltage condition impedance offered by the voltage clamping device is infinity. low. moderate. high. infinity. low. moderate. high. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which statement is true for latching current ? It is related to conduction process of device. Both C and D. It is related to turn off process of the device. It is related to turn on process of the device. It is related to conduction process of device. Both C and D. It is related to turn off process of the device. It is related to turn on process of the device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Maximum di / dt in a SCR is both A and C. directly proportional to Vm of supply voltage. inversely proportional to Vm of supply voltage. inversely proportional to L in the circuit. both A and C. directly proportional to Vm of supply voltage. inversely proportional to Vm of supply voltage. inversely proportional to L in the circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is disadvantage of fast recovery diodes? Doping is carried out. Recovery is only 5 µs. Recovery is only 50 µs. None of these. Doping is carried out. Recovery is only 5 µs. Recovery is only 50 µs. None of these. ANSWER DOWNLOAD EXAMIANS APP
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