Power Electronics For an SCR gate cathode characteristic is a straight line of 130. For triggered source volume of 15 V and allowable gate power dissipation of 0.5 W compute the gate source resistance? 108 ohm 111.9 ohm 115 ohm 11.19 ohm 108 ohm 111.9 ohm 115 ohm 11.19 ohm ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is used in heat sink? Aluminium. Iron. Silver. Carbon. Aluminium. Iron. Silver. Carbon. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During gate recovery time charge carriers of J3 junction is removed. charge carriers of J2 junction is swept out. charge carriers of J2 junction recombined. charge carrier of J1 junction removed. charge carriers of J3 junction is removed. charge carriers of J2 junction is swept out. charge carriers of J2 junction recombined. charge carrier of J1 junction removed. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What is used to protect a thyristor from high di / dt conditions? Fuse. Voltage clamping device. Inductor. Snubber circuit. Fuse. Voltage clamping device. Inductor. Snubber circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The typical time of rising time lies between 10 - 20 µs. 90 - 100 µs. 40 - 60 µs. 1 - 4 µs. 10 - 20 µs. 90 - 100 µs. 40 - 60 µs. 1 - 4 µs. ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS