Power Electronics Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is GTO. MCT. FCT. IGBT. GTO. MCT. FCT. IGBT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Figure shows two thyristors rated 400 A sharing a load current. Current through T2 is 180A. Current through T1 will be 150 A. 110 A. 120 A. 100 A. 150 A. 110 A. 120 A. 100 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Dynamic equalising circuit is useful to limit dV / dt of SCR. both B and C. to limit di / dt of SCR. for voltage equalisation. to limit dV / dt of SCR. both B and C. to limit di / dt of SCR. for voltage equalisation. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Between the peak point and the valley point of UJT emitter characteristics we have ___________ region None of these Negative resistance Cut-off Saturation None of these Negative resistance Cut-off Saturation ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A triac has ___________ semiconductor layers. Two Four Five Three Two Four Five Three ANSWER DOWNLOAD EXAMIANS APP
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