Power Electronics A power semiconductor may undergo damage due to Low dv/dt. High di/dt. High dv/dt. Low di/dt. Low dv/dt. High di/dt. High dv/dt. Low di/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During reverse recovery time charge carrier of junction J1 is swept out. charge carrier of junction J3 is swept out. charge carrier of junction J2 recombined. both B and C. charge carrier of junction J1 is swept out. charge carrier of junction J3 is swept out. charge carrier of junction J2 recombined. both B and C. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What is used to protect the SCR from over current ? Heat sink. CB and fuse. Voltage clamping device. Snubber circuit. Heat sink. CB and fuse. Voltage clamping device. Snubber circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Dynamic equalising circuit is useful both B and C. for voltage equalisation. to limit dV / dt of SCR. to limit di / dt of SCR. both B and C. for voltage equalisation. to limit dV / dt of SCR. to limit di / dt of SCR. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When a UJT is turned ON, the resistance between emitter terminal and lower base terminal ___________ None of these Is increased Remains the same Is decreased None of these Is increased Remains the same Is decreased ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A triac has ___________ semiconductor layers. Two Four Three Five Two Four Three Five ANSWER DOWNLOAD EXAMIANS APP
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