Power Electronics A power semiconductor may undergo damage due to Low di/dt. High di/dt. Low dv/dt. High dv/dt. Low di/dt. High di/dt. Low dv/dt. High dv/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A step up chopper has input voltage 110 V and output voltage 150 V. The value of duty cycle is 0.32. 0.27. 0.45. 0.67. 0.32. 0.27. 0.45. 0.67. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What happen due to high di / dt? Breakdown of junction. None of these. Local hot spot. Insulation failure. Breakdown of junction. None of these. Local hot spot. Insulation failure. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt? 1000 V/µs. 800 V/µs. 1200 V/µs. 600 V/µs. 1000 V/µs. 800 V/µs. 1200 V/µs. 600 V/µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During gate recovery time charge carriers of J2 junction is swept out. charge carrier of J1 junction removed. charge carriers of J3 junction is removed. charge carriers of J2 junction recombined. charge carriers of J2 junction is swept out. charge carrier of J1 junction removed. charge carriers of J3 junction is removed. charge carriers of J2 junction recombined. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Latching current for an SCR inserted between a dc voltage source of 200 V and load is 100 mA. Compute the minimum rate of width pulse required to turn ON the SCR in case load consists of R = 20 Ω in series with L = 0.2 H. 300 µs. 150 µs. 100 µs. 200 µs. 300 µs. 150 µs. 100 µs. 200 µs. ANSWER DOWNLOAD EXAMIANS APP
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