Power Electronics A power semiconductor may undergo damage due to Low di/dt. Low dv/dt. High di/dt. High dv/dt. Low di/dt. Low dv/dt. High di/dt. High dv/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A string of n parallel SCRs is operated at 72 KA, the rating of each SCR is 1 KA. If derating factor of the string is 0.1. Then calculate the value of n 90. 60. 80. 70. 90. 60. 80. 70. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that does not have the gate terminal is ___________. FET Triac Diac SCR FET Triac Diac SCR ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What happen due to high di / dt? None of these. Breakdown of junction. Insulation failure. Local hot spot. None of these. Breakdown of junction. Insulation failure. Local hot spot. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Spread time is defined as the interval during which anode current rises from 90 % to its final value. anode current rises from 10 % to 90 % of its final value. anode voltage drops from 10 % of its initial value to zero. both (A) and (B). anode current rises from 90 % to its final value. anode current rises from 10 % to 90 % of its final value. anode voltage drops from 10 % of its initial value to zero. both (A) and (B). ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Latching current for an SCR inserted between a dc voltage source of 200 V and load is 100 mA. Compute the minimum rate of width pulse required to turn ON the SCR in case load consists of R = 20 Ω in series with L = 0.2 H. 200 µs. 150 µs. 100 µs. 300 µs. 200 µs. 150 µs. 100 µs. 300 µs. ANSWER DOWNLOAD EXAMIANS APP
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