Power Electronics The device that exhibits negative resistance region is ___________. Diac Transistor Triac UJT Diac Transistor Triac UJT ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? SIT. SITH. SCR. GTO. SIT. SITH. SCR. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Latching current for an SCR inserted between a dc voltage source of 200 V and load is 100 mA. Compute the minimum rate of width pulse required to turn ON the SCR in case load consists of R = 20 Ω in series with L = 0.2 H. 300 µs. 150 µs. 200 µs. 100 µs. 300 µs. 150 µs. 200 µs. 100 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A triac is equivalent to two SCRs ___________. In series None of these In inverse-parallel In parallel In series None of these In inverse-parallel In parallel ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Snubber circuit is used with SCR anti parallel. in parallel. either series or parallel. in series. anti parallel. in parallel. either series or parallel. in series. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant UJT None of these Transistor SCR UJT None of these Transistor SCR ANSWER DOWNLOAD EXAMIANS APP
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