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Power Electronics

Power Electronics
The device that exhibits negative resistance region is ___________.

Triac
Transistor
Diac
UJT

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Power Electronics
A modern power semiconductor device that combines the characteristic of BJT and MOSFET is

  IGBT.
 MCT.
 GTO.
 FCT.

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Power Electronics
A single phase full bridge inverter can operated in load commutation mode in case load consist of

 RL.
 RLC critically damped.
 RLC underdamped.
 RLC overdamped.

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Power Electronics
A diac is ___________ switch

None of these
A mechanical
A d.c.
An c.

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Power Electronics
The function of snubber circuit connected across the SCR is to

 increase dV / dt.
 decrease dV / dt.
  suppress dV / dt.
 decrease di / dt.

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Power Electronics
A single phase full bridge inverter can operate in load commutation mode in case load consists of

 RLC overdamped.
 RLC critically damped.
  RLC underdamped.
 RL.

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