Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. IGBT. GTO. FCT. MCT. IGBT. GTO. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Calculate the maximum voltage that can be safely blocked by the string shown in figure, if maximum allowable leakage current is 2 mA? 6 KV. 10 KV. 2 KV. 8 KV. 6 KV. 10 KV. 2 KV. 8 KV. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Figure shows two thyristors rated 400 A sharing a load current. Current through T2 is 180A. Current through T1 will be 150 A. 120 A. 100 A. 110 A. 150 A. 120 A. 100 A. 110 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is 145 μs. 140 μs. 130 μs. 135 μs. 145 μs. 140 μs. 130 μs. 135 μs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Example of a voltage clamping device snubber circuit. fast acting fuse. metal oxide varistor. aluminium block. snubber circuit. fast acting fuse. metal oxide varistor. aluminium block. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A single phase one pulse controlled circuit has a resistance R and counter emf E load 400 sin(314 t) as the source voltage. For a load counter emf of 200 V, the range of firing angle control is 30° to 180°. 60° to 180°. 60° to 120°. 30° to 150°. 30° to 180°. 60° to 180°. 60° to 120°. 30° to 150°. ANSWER DOWNLOAD EXAMIANS APP
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