Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is FCT. MCT. GTO. IGBT. FCT. MCT. GTO. IGBT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to Low dv/dt. High dv/dt. High di/dt. Low di/dt. Low dv/dt. High dv/dt. High di/dt. Low di/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics How can we protect SCR from thermal conditions ? Using CB and fuse. Using heat sink. Use of snubber circuit. Using equalizing circuit. Using CB and fuse. Using heat sink. Use of snubber circuit. Using equalizing circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt? 600 V/µs. 1200 V/µs. 800 V/µs. 1000 V/µs. 600 V/µs. 1200 V/µs. 800 V/µs. 1000 V/µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Example of a voltage clamping device aluminium block. metal oxide varistor. fast acting fuse. snubber circuit. aluminium block. metal oxide varistor. fast acting fuse. snubber circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics SITH is also known as None of these. Silicon controlled rectifier. Filled controlled rectifier. Filled controlled diode. None of these. Silicon controlled rectifier. Filled controlled rectifier. Filled controlled diode. ANSWER DOWNLOAD EXAMIANS APP
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