Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is FCT. GTO. IGBT. MCT. FCT. GTO. IGBT. MCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that does not have the gate terminal is ___________. FET SCR Triac Diac FET SCR Triac Diac ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During gate recovery time charge carriers of J3 junction is removed. charge carriers of J2 junction is swept out. charge carrier of J1 junction removed. charge carriers of J2 junction recombined. charge carriers of J3 junction is removed. charge carriers of J2 junction is swept out. charge carrier of J1 junction removed. charge carriers of J2 junction recombined. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics If holding current of a thyristor is 2 mA then latching current should be 0.01 A. 0.004 A. 0.009 A. 0.002 A. 0.01 A. 0.004 A. 0.009 A. 0.002 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When a large surge current of very short duration flows through a thyristor then which one of the following device will operate to protect the thyristor ? Snubber circuit. CB. Voltage clamping device. Fast acting current limiting device (FACL fuse). Snubber circuit. CB. Voltage clamping device. Fast acting current limiting device (FACL fuse). ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is not a characteristic of UJT? Intrinsic stand off ratio Negative resistance Bilateral conduction Peak-point voltage Intrinsic stand off ratio Negative resistance Bilateral conduction Peak-point voltage ANSWER DOWNLOAD EXAMIANS APP
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