Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. GTO. IGBT. FCT. MCT. GTO. IGBT. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thermal voltage VT can be given by qT/K. (K2/q)(T + 1/T - 1). KT/q. Kq/T. qT/K. (K2/q)(T + 1/T - 1). KT/q. Kq/T. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will Turn on. Turn on if inductance is removed. Not turn on. Turn on if pulse frequency us increased to two times. Turn on. Turn on if inductance is removed. Not turn on. Turn on if pulse frequency us increased to two times. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? SITH. GTO. SIT. SCR. SITH. GTO. SIT. SCR. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Under normal operating condition voltage clamping device offers impedance of low value. high value. moderate value. zero value. low value. high value. moderate value. zero value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Rise time is defined by the interval when both B and C. anode voltage drops from 90 % to 10 % of its initial value. anode current rises 10 % to 90 % of its final value. gate current rises from 90 % to 100 % of it final value. both B and C. anode voltage drops from 90 % to 10 % of its initial value. anode current rises 10 % to 90 % of its final value. gate current rises from 90 % to 100 % of it final value. ANSWER DOWNLOAD EXAMIANS APP
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