Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. IGBT. GTO. FCT. MCT. IGBT. GTO. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The triac is ___________. Like a bidirectional SCR Not a thyristor A four-terminal device None of these Like a bidirectional SCR Not a thyristor A four-terminal device None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In forward blocking mode of a thyristor junction J2 is in reverse bias and J1, J3 is in forward bias. junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics If a latching current for the circuit shown in figure is 2 mA. Obtain the value of minimum width of the property turn ON the SCR? 3.1 µs 3.3 µs 3.2 µs 3 µs. 3.1 µs 3.3 µs 3.2 µs 3 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The latching current of GTO should be of order 1 A. 100 mA. 2 A. 500 mA. 1 A. 100 mA. 2 A. 500 mA. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to High dv/dt. Low dv/dt. High di/dt. Low di/dt. High dv/dt. Low dv/dt. High di/dt. Low di/dt. ANSWER DOWNLOAD EXAMIANS APP
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