Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. GTO. FCT. IGBT. MCT. GTO. FCT. IGBT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The function of snubber circuit connected across the SCR is to suppress dV / dt. increase dV / dt. decrease dV / dt. decrease di / dt. suppress dV / dt. increase dV / dt. decrease dV / dt. decrease di / dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A triac is a ___________ switch Mechanical Bidirectional Unidirectional None of these Mechanical Bidirectional Unidirectional None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics After peak point, the UJT operates in the ___________ region. None of these Cut-off Negative resistance Saturation None of these Cut-off Negative resistance Saturation ANSWER DOWNLOAD EXAMIANS APP
Power Electronics To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage. Less than None of these Equal to More than Less than None of these Equal to More than ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? SCR. GTO. SITH. SIT. SCR. GTO. SITH. SIT. ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS