Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. FCT. IGBT. GTO. MCT. FCT. IGBT. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Rise time is defined by the interval when gate current rises from 90 % to 100 % of it final value. anode current rises 10 % to 90 % of its final value. both B and C. anode voltage drops from 90 % to 10 % of its initial value. gate current rises from 90 % to 100 % of it final value. anode current rises 10 % to 90 % of its final value. both B and C. anode voltage drops from 90 % to 10 % of its initial value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics COOLMOS device can be used in application up to power range of 100 KVA. 1 KVA. 2 KVA. 500 VA. 100 KVA. 1 KVA. 2 KVA. 500 VA. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What is used to protect a thyristor from high di / dt conditions? Voltage clamping device. Snubber circuit. Inductor. Fuse. Voltage clamping device. Snubber circuit. Inductor. Fuse. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac is simply ___________. A single junction device None of these A three junction device A triac without gate terminal A single junction device None of these A three junction device A triac without gate terminal ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 = Vc2 = Vc3 any value of Ig. ANSWER DOWNLOAD EXAMIANS APP
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