Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. GTO. FCT. IGBT. MCT. GTO. FCT. IGBT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thermal voltage VT can be given by KT/q. qT/K. (K2/q)(T + 1/T - 1). Kq/T. KT/q. qT/K. (K2/q)(T + 1/T - 1). Kq/T. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During reverse recovery time charge carrier of junction J3 is swept out. charge carrier of junction J2 recombined. both B and C. charge carrier of junction J1 is swept out. charge carrier of junction J3 is swept out. charge carrier of junction J2 recombined. both B and C. charge carrier of junction J1 is swept out. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In a P1N1P2N2 thyristor which layer is less doped ? P1. N2. N1. P2. P1. N2. N1. P2. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac is turned on by ___________. Gate voltage None of these Gate current A breakover voltage Gate voltage None of these Gate current A breakover voltage ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Dynamic equalizing circuit is used for equal division of voltage across each thyristor in parallel. equal division of current through each thyristor in series. equal division of current through each thyristor in parallel. equal division of voltage across each thyristor. equal division of voltage across each thyristor in parallel. equal division of current through each thyristor in series. equal division of current through each thyristor in parallel. equal division of voltage across each thyristor. ANSWER DOWNLOAD EXAMIANS APP
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