Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is IGBT. FCT. GTO. MCT. IGBT. FCT. GTO. MCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics ON state voltage drop across SCR lie between the range 1.5 - 2 V. 0 - 0.5 V. 1 - 1.5 V. 0.5 - 1 V. 1.5 - 2 V. 0 - 0.5 V. 1 - 1.5 V. 0.5 - 1 V. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Spread time is defined as the interval during which anode voltage drops from 10 % of its initial value to zero. anode current rises from 90 % to its final value. both (A) and (B). anode current rises from 10 % to 90 % of its final value. anode voltage drops from 10 % of its initial value to zero. anode current rises from 90 % to its final value. both (A) and (B). anode current rises from 10 % to 90 % of its final value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The UJT may be used as ___________. Am amplifier A sawtooth generator A rectifier None of these Am amplifier A sawtooth generator A rectifier None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics For series connected SCR’s dynamic equalising circuit consists of series R and diode with C across R. R and C in series but with diode across R. series R and diode with C across R. R and C in series but with diode across C. series R and diode with C across R. R and C in series but with diode across R. series R and diode with C across R. R and C in series but with diode across C. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics For an SCR gate cathode characteristic is a straight line of 130. For triggered source volume of 15 V and allowable gate power dissipation of 0.5 W compute the gate source resistance? 11.19 ohm 111.9 ohm 108 ohm 115 ohm 11.19 ohm 111.9 ohm 108 ohm 115 ohm ANSWER DOWNLOAD EXAMIANS APP
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