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Power Electronics

Power Electronics
A modern power semiconductor device that combines the characteristic of BJT and MOSFET is

 FCT.
  IGBT.
 MCT.
 GTO.

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Power Electronics
A UJT has ___________.

Three pn junctions
Two pn junctions
None of these
One pn junction

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Power Electronics
4 thyristors rated 200 V in series. The operating voltage of the string is 0.600 V. Derating factor of the string is

  0.25.
 0.75.
 0.7.
 0.2.

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Power Electronics
Snubber circuit is used with SCR

 either series or parallel.
  in parallel.
 in series.
 anti parallel.

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Power Electronics
To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage.

More than
Less than
Equal to
None of these

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Power Electronics
60 thyrsistors are connected in series and parallel to form a 10 KV and 5.5 KA switch. Each thyristor is rated for 1.2 KV, 1 KA. The no. of parallel path are 6. The efficiency of the switch is

 91.6 %.
 83.3 %.
  76.3 %.
 90.9 %.

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