Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. IGBT. GTO. FCT. MCT. IGBT. GTO. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In forward blocking mode of a thyristor Junction J1, J3 is in reverse bias and J2 is in forward bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J3 is in forward bias and J1, J2 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J3 is in forward bias and J1, J2 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A triac is equivalent to two SCRs ___________. In series In inverse-parallel In parallel None of these In series In inverse-parallel In parallel None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics If the anode current is 800 A, then the amount of current required to turn off the GTO is about 200 A. 600 A. 20 A. 400 A. 200 A. 600 A. 20 A. 400 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics If holding current of a thyristor is 2 mA then latching current should be 0.002 A. 0.01 A. 0.004 A. 0.009 A. 0.002 A. 0.01 A. 0.004 A. 0.009 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of None of these. BJTs and SITs. BJTs and MOSFETs. SITs and MOSFETs. None of these. BJTs and SITs. BJTs and MOSFETs. SITs and MOSFETs. ANSWER DOWNLOAD EXAMIANS APP
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