Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. IGBT. GTO. FCT. MCT. IGBT. GTO. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thyristor is nothing but a Amplifier with higher gain. Controlled switch. Amplifier with large current gain. Controlled transistor. Amplifier with higher gain. Controlled switch. Amplifier with large current gain. Controlled transistor. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is 135 μs. 140 μs. 145 μs. 130 μs. 135 μs. 140 μs. 145 μs. 130 μs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which following is a two terminal three layer device? Power dioed. BJT. None of above. MOSFET. Power dioed. BJT. None of above. MOSFET. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A single phase full bridge inverter can operate in load commutation mode in case load consists of RLC overdamped. RLC underdamped. RL. RLC critically damped. RLC overdamped. RLC underdamped. RL. RLC critically damped. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Spread time is defined as the interval during which anode voltage drops from 10 % of its initial value to zero. anode current rises from 90 % to its final value. both (A) and (B). anode current rises from 10 % to 90 % of its final value. anode voltage drops from 10 % of its initial value to zero. anode current rises from 90 % to its final value. both (A) and (B). anode current rises from 10 % to 90 % of its final value. ANSWER DOWNLOAD EXAMIANS APP
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