Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. IGBT. GTO. FCT. MCT. IGBT. GTO. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What is used to protect a thyristor from high di / dt conditions? Inductor. Fuse. Snubber circuit. Voltage clamping device. Inductor. Fuse. Snubber circuit. Voltage clamping device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is not a characteristic of UJT? Peak-point voltage Bilateral conduction Intrinsic stand off ratio Negative resistance Peak-point voltage Bilateral conduction Intrinsic stand off ratio Negative resistance ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A single phase full bridge inverter can operated in load commutation mode in case load consist of RL. RLC critically damped. RLC underdamped. RLC overdamped. RL. RLC critically damped. RLC underdamped. RLC overdamped. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics ON state voltage drop across SCR lie between the range 1.5 - 2 V. 0 - 0.5 V. 0.5 - 1 V. 1 - 1.5 V. 1.5 - 2 V. 0 - 0.5 V. 0.5 - 1 V. 1 - 1.5 V. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics 60 thyrsistors are connected in series and parallel to form a 10 KV and 5.5 KA switch. Each thyristor is rated for 1.2 KV, 1 KA. The no. of parallel path are 6. The efficiency of the switch is 83.3 %. 76.3 %. 90.9 %. 91.6 %. 83.3 %. 76.3 %. 90.9 %. 91.6 %. ANSWER DOWNLOAD EXAMIANS APP
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