Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is IGBT. GTO. FCT. MCT. IGBT. GTO. FCT. MCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac is simply ___________. A single junction device A three junction device A triac without gate terminal None of these A single junction device A three junction device A triac without gate terminal None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Gate circuit or triggering circuit of a thyristor is lower power circuit. high power circuit. magnetic circuit. may be low power or high power circuit. lower power circuit. high power circuit. magnetic circuit. may be low power or high power circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A triac is equivalent to two SCRs ___________. None of these In parallel In series In inverse-parallel None of these In parallel In series In inverse-parallel ANSWER DOWNLOAD EXAMIANS APP
Power Electronics For an SCR gate cathode characteristic is a straight line of 130. For triggered source volume of 15 V and allowable gate power dissipation of 0.5 W compute the gate source resistance? 111.9 ohm 115 ohm 108 ohm 11.19 ohm 111.9 ohm 115 ohm 108 ohm 11.19 ohm ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which following is a two terminal three layer device? BJT. MOSFET. Power dioed. None of above. BJT. MOSFET. Power dioed. None of above. ANSWER DOWNLOAD EXAMIANS APP
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