Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is IGBT. GTO. FCT. MCT. IGBT. GTO. FCT. MCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During reverse recovery time charge carrier of junction J3 is swept out. charge carrier of junction J1 is swept out. both B and C. charge carrier of junction J2 recombined. charge carrier of junction J3 is swept out. charge carrier of junction J1 is swept out. both B and C. charge carrier of junction J2 recombined. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A thyristor will be triggered when Vg = 1.5 volt and Ig = 100 mA in the given figure. Calculate the value of R in ohm is 3.714. 65. 60. 37.14. 3.714. 65. 60. 37.14. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics 4 thyristors rated 200 V in series. The operating voltage of the string is 0.600 V. Derating factor of the string is 0.7. 0.2. 0.75. 0.25. 0.7. 0.2. 0.75. 0.25. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics An SCR has half cycle surge current rating of 3000 A for 50 Hz supply. One cycle surge current will be 4242.64 A. 6000 A. 2121.32 A. 1500 A. 4242.64 A. 6000 A. 2121.32 A. 1500 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Compared to transistor, ______________ have lower on state conduction losses and higher power handling capability MOSFETs. TRIACs. Thyristor. Semi conductor diodes. MOSFETs. TRIACs. Thyristor. Semi conductor diodes. ANSWER DOWNLOAD EXAMIANS APP
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