Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. IGBT. GTO. FCT. MCT. IGBT. GTO. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ terminals. None of these Four Three Two None of these Four Three Two ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Under over voltage condition impedance offered by the voltage clamping device is low. infinity. high. moderate. low. infinity. high. moderate. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage. Less than Equal to None of these More than Less than Equal to None of these More than ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A thyristor string is made of a no. of SCR connected in series and parallel. The string have volume and current of 11 KV and 4 KA. The voltage and current rating of available SCRs are 1800 V and 1000 A. For a string efficiency of 90 % let the number of SCRs in series and parallel are a and b respectively. Then the value of a and b will be 7, 5. 4, 6. 5, 7. 6, 4. 7, 5. 4, 6. 5, 7. 6, 4. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Snubber circuit is used with SCR either series or parallel. in parallel. in series. anti parallel. either series or parallel. in parallel. in series. anti parallel. ANSWER DOWNLOAD EXAMIANS APP
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