Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. GTO. IGBT. FCT. MCT. GTO. IGBT. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power MOSFET has three terminals called Collector, emitter and base. Drain, source and gate. Collector, emitter and gate. Drain, source and base. Collector, emitter and base. Drain, source and gate. Collector, emitter and gate. Drain, source and base. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt? 600 V/µs. 800 V/µs. 1000 V/µs. 1200 V/µs. 600 V/µs. 800 V/µs. 1000 V/µs. 1200 V/µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The latching current of GTO should be of order 2 A. 1 A. 500 mA. 100 mA. 2 A. 1 A. 500 mA. 100 mA. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thermal voltage VT can be given by Kq/T. KT/q. qT/K. (K2/q)(T + 1/T - 1). Kq/T. KT/q. qT/K. (K2/q)(T + 1/T - 1). ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Why resistor is used in Snubber circuit ? To minimize the charging current. To minimize the loss . To minimize the discharging current. All of these. To minimize the charging current. To minimize the loss . To minimize the discharging current. All of these. ANSWER DOWNLOAD EXAMIANS APP
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