Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is GTO. IGBT. MCT. FCT. GTO. IGBT. MCT. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? GTO. SCR. SITH. SIT. GTO. SCR. SITH. SIT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Compared to transistor, ______________ have lower on state conduction losses and higher power handling capability MOSFETs. TRIACs. Semi conductor diodes. Thyristor. MOSFETs. TRIACs. Semi conductor diodes. Thyristor. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics CB used for over current protection of thyristor operates when the fault current is neither (A) nor (B). of long period. both (A) and (B). of short duration. neither (A) nor (B). of long period. both (A) and (B). of short duration. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics How can we protect SCR from thermal conditions ? Using heat sink. Use of snubber circuit. Using equalizing circuit. Using CB and fuse. Using heat sink. Use of snubber circuit. Using equalizing circuit. Using CB and fuse. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The latching current of SCR is 20 mA. Its holding current will be 23 mA. 10 mA. 40 mA. 60 mA. 23 mA. 10 mA. 40 mA. 60 mA. ANSWER DOWNLOAD EXAMIANS APP
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