Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is FCT. MCT. GTO. IGBT. FCT. MCT. GTO. IGBT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics To meet high current demand we use SCRs in parallel connection. series connection. anti parallel connection. both B and C. parallel connection. series connection. anti parallel connection. both B and C. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A single phase full bridge inverter can operated in load commutation mode in case load consist of RLC underdamped. RL. RLC critically damped. RLC overdamped. RLC underdamped. RL. RLC critically damped. RLC overdamped. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Maximum di / dt in a SCR is inversely proportional to L in the circuit. both A and C. directly proportional to Vm of supply voltage. inversely proportional to Vm of supply voltage. inversely proportional to L in the circuit. both A and C. directly proportional to Vm of supply voltage. inversely proportional to Vm of supply voltage. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics 60 thyrsistors are connected in series and parallel to form a 10 KV and 5.5 KA switch. Each thyristor is rated for 1.2 KV, 1 KA. The no. of parallel path are 6. The efficiency of the switch is 91.6 %. 83.3 %. 90.9 %. 76.3 %. 91.6 %. 83.3 %. 90.9 %. 76.3 %. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thermal voltage VT can be given by qT/K. Kq/T. KT/q. (K2/q)(T + 1/T - 1). qT/K. Kq/T. KT/q. (K2/q)(T + 1/T - 1). ANSWER DOWNLOAD EXAMIANS APP
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