Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. FCT. IGBT. GTO. MCT. FCT. IGBT. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Under over voltage condition impedance offered by the voltage clamping device is low. high. moderate. infinity. low. high. moderate. infinity. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ___________. Extremely low None of these Low High Extremely low None of these Low High ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A 200 A thyristor is to be operated in parallel with a 300 A thyristor. The ON state voltage drops are 1.5 V and 1.2 Volts. What is the value of resistance R to be connected in series with each thyristor, so that current through the combination is 500 A and each of them is fully loaded ? 0.3 ohm 3.0 ohm 0.3 ohm 0.03 ohm 0.3 ohm 3.0 ohm 0.3 ohm 0.03 ohm ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When a UJT is turned ON, the resistance between emitter terminal and lower base terminal ___________ None of these Is decreased Remains the same Is increased None of these Is decreased Remains the same Is increased ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following is not a power transistor? COOLMOS. IGBTs. TRIAC. SITS. COOLMOS. IGBTs. TRIAC. SITS. ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS