Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is GTO. FCT. IGBT. MCT. GTO. FCT. IGBT. MCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In forward blocking mode of a thyristor junction J2 is in reverse bias and J1, J3 is in forward bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 is in reverse bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Compared to transistor, ______________ have lower on state conduction losses and higher power handling capability TRIACs. Semi conductor diodes. Thyristor. MOSFETs. TRIACs. Semi conductor diodes. Thyristor. MOSFETs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In a UJT, the p-type emitter is ___________ doped Moderately Heavily None of these Lightly Moderately Heavily None of these Lightly ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant None of these UJT SCR Transistor None of these UJT SCR Transistor ANSWER DOWNLOAD EXAMIANS APP
Power Electronics After peak point, the UJT operates in the ___________ region. Negative resistance Cut-off Saturation None of these Negative resistance Cut-off Saturation None of these ANSWER DOWNLOAD EXAMIANS APP
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