Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is IGBT. MCT. GTO. FCT. IGBT. MCT. GTO. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ semiconductor layers Two Three None of these Four Two Three None of these Four ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Maximum di / dt in a SCR is inversely proportional to L in the circuit. inversely proportional to Vm of supply voltage. both A and C. directly proportional to Vm of supply voltage. inversely proportional to L in the circuit. inversely proportional to Vm of supply voltage. both A and C. directly proportional to Vm of supply voltage. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A 200 A thyristor is to be operated in parallel with a 300 A thyristor. The ON state voltage drops are 1.5 V and 1.2 Volts. What is the value of resistance R to be connected in series with each thyristor, so that current through the combination is 500 A and each of them is fully loaded ? 3.0 ohm 0.3 ohm 0.03 ohm 0.3 ohm 3.0 ohm 0.3 ohm 0.03 ohm 0.3 ohm ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Between the peak point and the valley point of UJT emitter characteristics we have ___________ region Saturation Cut-off Negative resistance None of these Saturation Cut-off Negative resistance None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ pn junctions Three None of these Four Two Three None of these Four Two ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS