Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. GTO. FCT. IGBT. MCT. GTO. FCT. IGBT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During which time maximum conduction spreading take place in the thyristor during turn ON? Same for every case. Spread time. Rise time. Delay time. Same for every case. Spread time. Rise time. Delay time. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Schottky diode. Microwave transistor. BJT. Power MOSFET. Schottky diode. Microwave transistor. BJT. Power MOSFET. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Switching frequency of SITH is 10 KHz. 100 KHz. 5 KHz. 60 KHz. 10 KHz. 100 KHz. 5 KHz. 60 KHz. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics SCRs are used in series to meet low current demand. high current demand. high voltage demand. low voltage demand. low current demand. high current demand. high voltage demand. low voltage demand. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Spread time is defined as the interval during which anode voltage drops from 10 % of its initial value to zero. anode current rises from 90 % to its final value. anode current rises from 10 % to 90 % of its final value. both (A) and (B). anode voltage drops from 10 % of its initial value to zero. anode current rises from 90 % to its final value. anode current rises from 10 % to 90 % of its final value. both (A) and (B). ANSWER DOWNLOAD EXAMIANS APP
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