Power Electronics In forward blocking mode of a thyristor junction J2 is in reverse bias and J1, J3 is in forward bias. junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that does not have the gate terminal is ___________. FET SCR Triac Diac FET SCR Triac Diac ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which following is a two terminal three layer device? Power dioed. None of above. MOSFET. BJT. Power dioed. None of above. MOSFET. BJT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Why resistor is used in Snubber circuit ? All of these. To minimize the charging current. To minimize the discharging current. To minimize the loss . All of these. To minimize the charging current. To minimize the discharging current. To minimize the loss . ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thermal voltage VT can be given by Kq/T. (K2/q)(T + 1/T - 1). KT/q. qT/K. Kq/T. (K2/q)(T + 1/T - 1). KT/q. qT/K. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is GTO. MCT. FCT. IGBT. GTO. MCT. FCT. IGBT. ANSWER DOWNLOAD EXAMIANS APP
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