Power Electronics In forward blocking mode of a thyristor junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics For series connected SCR’s dynamic equalising circuit consists of R and C in series but with diode across R. series R and diode with C across R. R and C in series but with diode across C. series R and diode with C across R. R and C in series but with diode across R. series R and diode with C across R. R and C in series but with diode across C. series R and diode with C across R. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Schottky diode. Power MOSFET. Microwave transistor. BJT. Schottky diode. Power MOSFET. Microwave transistor. BJT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? SCR. SIT. SITH. GTO. SCR. SIT. SITH. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Materials used in heat sink should have All of these. large surface area. high thermal conductivity. high melting point. All of these. large surface area. high thermal conductivity. high melting point. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics SITH is also known as None of these. Filled controlled diode. Silicon controlled rectifier. Filled controlled rectifier. None of these. Filled controlled diode. Silicon controlled rectifier. Filled controlled rectifier. ANSWER DOWNLOAD EXAMIANS APP
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