Power Electronics During which time maximum conduction spreading take place in the thyristor during turn ON? Same for every case. Spread time. Rise time. Delay time. Same for every case. Spread time. Rise time. Delay time. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The triac is ___________. None of these Not a thyristor Like a bidirectional SCR A four-terminal device None of these Not a thyristor Like a bidirectional SCR A four-terminal device ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is 140 μs. 135 μs. 130 μs. 145 μs. 140 μs. 135 μs. 130 μs. 145 μs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Between the peak point and the valley point of UJT emitter characteristics we have ___________ region Cut-off Saturation None of these Negative resistance Cut-off Saturation None of these Negative resistance ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of BJTs and MOSFETs. BJTs and SITs. None of these. SITs and MOSFETs. BJTs and MOSFETs. BJTs and SITs. None of these. SITs and MOSFETs. ANSWER DOWNLOAD EXAMIANS APP
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