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Power Electronics

Power Electronics
The latching current of GTO should be of order

 1 A.
  500 mA.
 2 A.
 100 mA.

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Power Electronics
SITH is also known as

 Silicon controlled rectifier.
 None of these.
 Filled controlled rectifier.
  Filled controlled diode.

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Power Electronics
Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then

  Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3.
 Vc1 = Vc2 = Vc3 any value of Ig.
 Vc1 > Vc2 > Vc3 when Ig1= Ig2
 Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3.

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Power Electronics
SCRs are used in series to meet

  high voltage demand.
 low voltage demand.
 high current demand.
 low current demand.

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Power Electronics
In a P1N1P2N2 thyristor which layer is less doped ?

 P1.
 N2.
  N1.
 P2.

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Power Electronics
Gate circuit or triggering circuit of a thyristor is

 magnetic circuit.
 high power circuit.
 may be low power or high power circuit.
  lower power circuit.

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