Power Electronics The latching current of GTO should be of order 500 mA. 1 A. 2 A. 100 mA. 500 mA. 1 A. 2 A. 100 mA. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which semiconductor device acts like a diode and two transistor? SCR. Diac. Triac. UJT. SCR. Diac. Triac. UJT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics How can we protect SCR from thermal conditions ? Using CB and fuse. Using equalizing circuit. Use of snubber circuit. Using heat sink. Using CB and fuse. Using equalizing circuit. Use of snubber circuit. Using heat sink. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of BJTs and SITs. SITs and MOSFETs. BJTs and MOSFETs. None of these. BJTs and SITs. SITs and MOSFETs. BJTs and MOSFETs. None of these. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? GTO. SIT. SITH. SCR. GTO. SIT. SITH. SCR. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Between the peak point and the valley point of UJT emitter characteristics we have ___________ region Saturation Negative resistance None of these Cut-off Saturation Negative resistance None of these Cut-off ANSWER DOWNLOAD EXAMIANS APP
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