Power Electronics The latching current of GTO should be of order 2 A. 500 mA. 100 mA. 1 A. 2 A. 500 mA. 100 mA. 1 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In reverse blocking mode of a thyristor junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J3 is in forward bias and J1, J2 in reverse bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is not a characteristic of UJT? Peak-point voltage Intrinsic stand off ratio Bilateral conduction Negative resistance Peak-point voltage Intrinsic stand off ratio Bilateral conduction Negative resistance ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which following is a two terminal three layer device? None of above. Power dioed. MOSFET. BJT. None of above. Power dioed. MOSFET. BJT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of BJTs and SITs. BJTs and MOSFETs. None of these. SITs and MOSFETs. BJTs and SITs. BJTs and MOSFETs. None of these. SITs and MOSFETs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. GTO. FCT. IGBT. MCT. GTO. FCT. IGBT. ANSWER DOWNLOAD EXAMIANS APP
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