Power Electronics In reverse blocking mode of a thyristor junction J2 is in reverse bias and J1, J3 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1= Ig2 ANSWER DOWNLOAD EXAMIANS APP
Power Electronics If the anode current is 800 A, then the amount of current required to turn off the GTO is about 200 A. 600 A. 400 A. 20 A. 200 A. 600 A. 400 A. 20 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During reverse recovery time charge carrier of junction J3 is swept out. charge carrier of junction J1 is swept out. charge carrier of junction J2 recombined. both B and C. charge carrier of junction J3 is swept out. charge carrier of junction J1 is swept out. charge carrier of junction J2 recombined. both B and C. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Under over voltage condition impedance offered by the voltage clamping device is infinity. moderate. high. low. infinity. moderate. high. low. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics SITH is also known as Filled controlled diode. Filled controlled rectifier. Silicon controlled rectifier. None of these. Filled controlled diode. Filled controlled rectifier. Silicon controlled rectifier. None of these. ANSWER DOWNLOAD EXAMIANS APP
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