Power Electronics In reverse blocking mode of a thyristor junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During reverse recovery time both B and C. charge carrier of junction J1 is swept out. charge carrier of junction J2 recombined. charge carrier of junction J3 is swept out. both B and C. charge carrier of junction J1 is swept out. charge carrier of junction J2 recombined. charge carrier of junction J3 is swept out. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The latching current of GTO should be of order 500 mA. 2 A. 100 mA. 1 A. 500 mA. 2 A. 100 mA. 1 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? Schottky diode. Power MOSFET. BJT. Microwave transistor. Schottky diode. Power MOSFET. BJT. Microwave transistor. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Figure shows two thyristors rated 400 A sharing a load current. Current through T2 is 180A. Current through T1 will be 110 A. 100 A. 120 A. 150 A. 110 A. 100 A. 120 A. 150 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The function of snubber circuit connected across the SCR is to decrease di / dt. decrease dV / dt. suppress dV / dt. increase dV / dt. decrease di / dt. decrease dV / dt. suppress dV / dt. increase dV / dt. ANSWER DOWNLOAD EXAMIANS APP
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