Power Electronics In reverse blocking mode of a thyristor junction J3 is in forward bias and J1, J2 in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The latching current of GTO should be of order 100 mA. 1 A. 500 mA. 2 A. 100 mA. 1 A. 500 mA. 2 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will Turn on if pulse frequency us increased to two times. Turn on if inductance is removed. Not turn on. Turn on. Turn on if pulse frequency us increased to two times. Turn on if inductance is removed. Not turn on. Turn on. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is IGBT. FCT. MCT. GTO. IGBT. FCT. MCT. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics If a latching current for the circuit shown in figure is 2 mA. Obtain the value of minimum width of the property turn ON the SCR? 3.1 µs 3.3 µs 3.2 µs 3 µs. 3.1 µs 3.3 µs 3.2 µs 3 µs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of BJTs and SITs. None of these. SITs and MOSFETs. BJTs and MOSFETs. BJTs and SITs. None of these. SITs and MOSFETs. BJTs and MOSFETs. ANSWER DOWNLOAD EXAMIANS APP