Power Electronics SITH is also known as Filled controlled diode. Filled controlled rectifier. None of these. Silicon controlled rectifier. Filled controlled diode. Filled controlled rectifier. None of these. Silicon controlled rectifier. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Delay time is defined by the interval when all of these. anode current reaches 10 % from forward leakage current. gate current increases from 90 % to 100 % of its final value. anode voltage drops from 100 % to 90 % of its actual value. all of these. anode current reaches 10 % from forward leakage current. gate current increases from 90 % to 100 % of its final value. anode voltage drops from 100 % to 90 % of its actual value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Practical way of obtaining static voltage equalization in series connected SCRs is by the use of one resistor across the string. one resistor in series with each SCR. resistors of different values across each SCR. resistors of the same value across each SCR. one resistor across the string. one resistor in series with each SCR. resistors of different values across each SCR. resistors of the same value across each SCR. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics 4 thyristors rated 200 V in series. The operating voltage of the string is 0.600 V. Derating factor of the string is 0.25. 0.7. 0.75. 0.2. 0.25. 0.7. 0.75. 0.2. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In reverse blocking mode of a thyristor junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is disadvantage of fast recovery diodes? Recovery is only 50 µs. None of these. Doping is carried out. Recovery is only 5 µs. Recovery is only 50 µs. None of these. Doping is carried out. Recovery is only 5 µs. ANSWER DOWNLOAD EXAMIANS APP
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