Power Electronics During reverse recovery time both B and C. charge carrier of junction J2 recombined. charge carrier of junction J1 is swept out. charge carrier of junction J3 is swept out. both B and C. charge carrier of junction J2 recombined. charge carrier of junction J1 is swept out. charge carrier of junction J3 is swept out. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In a P1N1P2N2 thyristor which layer is less doped ? N2. P1. N1. P2. N2. P1. N1. P2. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thyristor can be protected from over voltages by using fuse. heat sink. snubber circuit. voltage clamping device. fuse. heat sink. snubber circuit. voltage clamping device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to Low di/dt. High di/dt. High dv/dt. Low dv/dt. Low di/dt. High di/dt. High dv/dt. Low dv/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The triac is ___________. None of these Like a bidirectional SCR Not a thyristor A four-terminal device None of these Like a bidirectional SCR Not a thyristor A four-terminal device ANSWER DOWNLOAD EXAMIANS APP
Power Electronics SCR will be turned off when anode current is less than holding current. both (A) and (B). < latching current but greater than holding current and gate signal is 0. < latching current but greater than holding current and gate signal is present. less than holding current. both (A) and (B). < latching current but greater than holding current and gate signal is 0. < latching current but greater than holding current and gate signal is present. ANSWER DOWNLOAD EXAMIANS APP
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