Power Electronics Thyristor can be protected from over voltages by using heat sink. voltage clamping device. snubber circuit. fuse. heat sink. voltage clamping device. snubber circuit. fuse. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. Increases Remains the same Decreases None of these Increases Remains the same Decreases None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following is normally ON device SIT. BJT. IGBT. TRIAC. SIT. BJT. IGBT. TRIAC. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Compared to transistor, ______________ have lower on state conduction losses and higher power handling capability Semi conductor diodes. MOSFETs. TRIACs. Thyristor. Semi conductor diodes. MOSFETs. TRIACs. Thyristor. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The latching current of GTO should be of order 1 A. 500 mA. 100 mA. 2 A. 1 A. 500 mA. 100 mA. 2 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In forward blocking mode of a thyristor Junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J3 is in forward bias and J1, J2 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J3 is in forward bias and J1, J2 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. ANSWER DOWNLOAD EXAMIANS APP