Power Electronics Thyristor can be protected from over voltages by using fuse. snubber circuit. heat sink. voltage clamping device. fuse. snubber circuit. heat sink. voltage clamping device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which one is most suitable power device for high frequency (>100 KHz) switching application? BJT. Power MOSFET. Microwave transistor. Schottky diode. BJT. Power MOSFET. Microwave transistor. Schottky diode. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant None of these Transistor SCR UJT None of these Transistor SCR UJT ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following devices has highest di/dt and dv/dt capability? SCR. SITH. GTO. SIT. SCR. SITH. GTO. SIT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics If holding current of a thyristor is 2 mA then latching current should be 0.004 A. 0.002 A. 0.009 A. 0.01 A. 0.004 A. 0.002 A. 0.009 A. 0.01 A. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of the following is disadvantage of fast recovery diodes? None of these. Doping is carried out. Recovery is only 5 µs. Recovery is only 50 µs. None of these. Doping is carried out. Recovery is only 5 µs. Recovery is only 50 µs. ANSWER DOWNLOAD EXAMIANS APP