Power Electronics Between the peak point and the valley point of UJT emitter characteristics we have ___________ region Negative resistance None of these Saturation Cut-off Negative resistance None of these Saturation Cut-off ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which triggering is the most reliable? dV / dt triggering. Gate triggering. Thermal triggering. Forward voltage triggering. dV / dt triggering. Gate triggering. Thermal triggering. Forward voltage triggering. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac is turned on by ___________. A breakover voltage Gate voltage None of these Gate current A breakover voltage Gate voltage None of these Gate current ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. FCT. IGBT. GTO. MCT. FCT. IGBT. GTO. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. Decreases Increases None of these Remains the same Decreases Increases None of these Remains the same ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In reverse blocking mode of a thyristor junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. ANSWER DOWNLOAD EXAMIANS APP
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