Power Electronics Between the peak point and the valley point of UJT emitter characteristics we have ___________ region Cut-off None of these Saturation Negative resistance Cut-off None of these Saturation Negative resistance ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which statement is true for latching current ? It is related to conduction process of device. Both C and D. It is related to turn on process of the device. It is related to turn off process of the device. It is related to conduction process of device. Both C and D. It is related to turn on process of the device. It is related to turn off process of the device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. GTO. FCT. IGBT. MCT. GTO. FCT. IGBT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics SCRs are used in series to meet high current demand. low current demand. low voltage demand. high voltage demand. high current demand. low current demand. low voltage demand. high voltage demand. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Rise time is defined by the interval when both B and C. gate current rises from 90 % to 100 % of it final value. anode current rises 10 % to 90 % of its final value. anode voltage drops from 90 % to 10 % of its initial value. both B and C. gate current rises from 90 % to 100 % of it final value. anode current rises 10 % to 90 % of its final value. anode voltage drops from 90 % to 10 % of its initial value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the intrinsic stand off ratio ___________. None of these Essentially remains the same Decreases Increases None of these Essentially remains the same Decreases Increases ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS