Power Electronics Which statement is true for latching current ? It is related to turn off process of the device. It is related to turn on process of the device. It is related to conduction process of device. Both C and D. It is related to turn off process of the device. It is related to turn on process of the device. It is related to conduction process of device. Both C and D. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A single phase one pulse controlled circuit has a resistance R and counter emf E load 400 sin(314 t) as the source voltage. For a load counter emf of 200 V, the range of firing angle control is 60° to 180°. 30° to 180°. 30° to 150°. 60° to 120°. 60° to 180°. 30° to 180°. 30° to 150°. 60° to 120°. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which following is a two terminal three layer device? BJT. MOSFET. None of above. Power dioed. BJT. MOSFET. None of above. Power dioed. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics SITH is also known as Filled controlled diode. Silicon controlled rectifier. Filled controlled rectifier. None of these. Filled controlled diode. Silicon controlled rectifier. Filled controlled rectifier. None of these. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which semiconductor device acts like a diode and two transistor? SCR. Diac. UJT. Triac. SCR. Diac. UJT. Triac. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A 200 A thyristor is to be operated in parallel with a 300 A thyristor. The ON state voltage drops are 1.5 V and 1.2 Volts. What is the value of resistance R to be connected in series with each thyristor, so that current through the combination is 500 A and each of them is fully loaded ? 0.3 ohm 0.03 ohm 3.0 ohm 0.3 ohm 0.3 ohm 0.03 ohm 3.0 ohm 0.3 ohm ANSWER DOWNLOAD EXAMIANS APP
EXAMIANS