Power Electronics Which statement is true for latching current ? It is related to turn on process of the device. It is related to turn off process of the device. Both C and D. It is related to conduction process of device. It is related to turn on process of the device. It is related to turn off process of the device. Both C and D. It is related to conduction process of device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In forward blocking mode of a thyristor Junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. Junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 is in reverse bias. Junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The maximum di/dt in a SCR is Directly proportional to supply voltage. Directly proportional to inductance in the circuit. Inversely proportional to supply voltage. Both A and B. Directly proportional to supply voltage. Directly proportional to inductance in the circuit. Inversely proportional to supply voltage. Both A and B. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Under over voltage condition impedance offered by the voltage clamping device is low. moderate. high. infinity. low. moderate. high. infinity. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Gate circuit or triggering circuit of a thyristor is lower power circuit. magnetic circuit. high power circuit. may be low power or high power circuit. lower power circuit. magnetic circuit. high power circuit. may be low power or high power circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that does not have the gate terminal is ___________. FET Triac Diac SCR FET Triac Diac SCR ANSWER DOWNLOAD EXAMIANS APP
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