Power Electronics During gate recovery time charge carrier of J1 junction removed. charge carriers of J3 junction is removed. charge carriers of J2 junction recombined. charge carriers of J2 junction is swept out. charge carrier of J1 junction removed. charge carriers of J3 junction is removed. charge carriers of J2 junction recombined. charge carriers of J2 junction is swept out. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Example of a voltage clamping device snubber circuit. fast acting fuse. aluminium block. metal oxide varistor. snubber circuit. fast acting fuse. aluminium block. metal oxide varistor. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics After proper turn on of thyristor gate signal must be removed. None of these gate signal should present but can be removed. gate signal is always present. gate signal must be removed. None of these gate signal should present but can be removed. gate signal is always present. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The device that exhibits negative resistance region is ___________. Transistor Triac Diac UJT Transistor Triac Diac UJT ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac is ___________ switch None of these An c. A d.c. A mechanical None of these An c. A d.c. A mechanical ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt? 800 V/µs. 1200 V/µs. 600 V/µs. 1000 V/µs. 800 V/µs. 1200 V/µs. 600 V/µs. 1000 V/µs. ANSWER DOWNLOAD EXAMIANS APP
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