Power Electronics During gate recovery time charge carrier of J1 junction removed. charge carriers of J3 junction is removed. charge carriers of J2 junction recombined. charge carriers of J2 junction is swept out. charge carrier of J1 junction removed. charge carriers of J3 junction is removed. charge carriers of J2 junction recombined. charge carriers of J2 junction is swept out. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to Low dv/dt. High di/dt. Low di/dt. High dv/dt. Low dv/dt. High di/dt. Low di/dt. High dv/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Anode current in an SCR consists of electrons only. either electron or holes. holes only. Both electron and holes. electrons only. either electron or holes. holes only. Both electron and holes. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics What is used to protect a thyristor from high di / dt conditions? Inductor. Voltage clamping device. Fuse. Snubber circuit. Inductor. Voltage clamping device. Fuse. Snubber circuit. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Between the peak point and the valley point of UJT emitter characteristics we have ___________ region Negative resistance Cut-off Saturation None of these Negative resistance Cut-off Saturation None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ___________. Low Extremely low High None of these Low Extremely low High None of these ANSWER DOWNLOAD EXAMIANS APP
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