Power Electronics During gate recovery time charge carriers of J3 junction is removed. charge carrier of J1 junction removed. charge carriers of J2 junction is swept out. charge carriers of J2 junction recombined. charge carriers of J3 junction is removed. charge carrier of J1 junction removed. charge carriers of J2 junction is swept out. charge carriers of J2 junction recombined. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is GTO. MCT. IGBT. FCT. GTO. MCT. IGBT. FCT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A UJT is sometimes called ___________ diode. Low resistance Single-base Double-base High resistance Low resistance Single-base Double-base High resistance ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac has ___________ semiconductor layers Three None of these Two Four Three None of these Two Four ANSWER DOWNLOAD EXAMIANS APP
Power Electronics To meet high current demand we use SCRs in series connection. both B and C. anti parallel connection. parallel connection. series connection. both B and C. anti parallel connection. parallel connection. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A diac is simply ___________. A single junction device A three junction device None of these A triac without gate terminal A single junction device A three junction device None of these A triac without gate terminal ANSWER DOWNLOAD EXAMIANS APP
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