Power Electronics Spread time is defined as the interval during which both (A) and (B). anode voltage drops from 10 % of its initial value to zero. anode current rises from 10 % to 90 % of its final value. anode current rises from 90 % to its final value. both (A) and (B). anode voltage drops from 10 % of its initial value to zero. anode current rises from 10 % to 90 % of its final value. anode current rises from 90 % to its final value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ___________. Low Extremely low High None of these Low Extremely low High None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics IGBT combines the advantages of SITs and MOSFETs. None of these. BJTs and SITs. BJTs and MOSFETs. SITs and MOSFETs. None of these. BJTs and SITs. BJTs and MOSFETs. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Dynamic equalising circuit is useful to limit dV / dt of SCR. both B and C. to limit di / dt of SCR. for voltage equalisation. to limit dV / dt of SCR. both B and C. to limit di / dt of SCR. for voltage equalisation. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In a P1N1P2N2 thyristor which layer is less doped ? N1. P1. N2. P2. N1. P1. N2. P2. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A modern power semiconductor device that combines the characteristic of BJT and MOSFET is MCT. FCT. GTO. IGBT. MCT. FCT. GTO. IGBT. ANSWER DOWNLOAD EXAMIANS APP
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