Power Electronics Which following is a two terminal three layer device? Power dioed. None of above. MOSFET. BJT. Power dioed. None of above. MOSFET. BJT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics During reverse recovery time charge carrier of junction J1 is swept out. charge carrier of junction J3 is swept out. both B and C. charge carrier of junction J2 recombined. charge carrier of junction J1 is swept out. charge carrier of junction J3 is swept out. both B and C. charge carrier of junction J2 recombined. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to High dv/dt. Low di/dt. High di/dt. Low dv/dt. High dv/dt. Low di/dt. High di/dt. Low dv/dt. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which of following is normally ON device SIT. TRIAC. IGBT. BJT. SIT. TRIAC. IGBT. BJT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Which statement is true for latching current ? Both C and D. It is related to turn off process of the device. It is related to turn on process of the device. It is related to conduction process of device. Both C and D. It is related to turn off process of the device. It is related to turn on process of the device. It is related to conduction process of device. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Thermal voltage VT can be given by qT/K. Kq/T. (K2/q)(T + 1/T - 1). KT/q. qT/K. Kq/T. (K2/q)(T + 1/T - 1). KT/q. ANSWER DOWNLOAD EXAMIANS APP
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