Power Electronics Which following is a two terminal three layer device? Power dioed. None of above. MOSFET. BJT. Power dioed. None of above. MOSFET. BJT. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The V-I characteristics for a triac in the first and third quadrants are essentially identical to those of ___________ in its first quadrant SCR UJT Transistor None of these SCR UJT Transistor None of these ANSWER DOWNLOAD EXAMIANS APP
Power Electronics In reverse blocking mode of a thyristor junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. junction J1, J3 is in reverse bias and J2 is in forward bias. junction J3 is in forward bias and J1, J2 in reverse bias. junction J2 is in reverse bias and J1, J3 is in forward bias. junction J1 and J2 is in forward bias and J3 is in reverse bias. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Under normal operating condition voltage clamping device offers impedance of moderate value. high value. low value. zero value. moderate value. high value. low value. zero value. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics When the temperature increases, the inter-base resistance (RBB) of a UJT ___________. Remains the same None of these Increases Decreases Remains the same None of these Increases Decreases ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Switching frequency of SITH is 10 KHz. 60 KHz. 5 KHz. 100 KHz. 10 KHz. 60 KHz. 5 KHz. 100 KHz. ANSWER DOWNLOAD EXAMIANS APP
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