Power Electronics For series connected SCR’s dynamic equalising circuit consists of R and C in series but with diode across C. series R and diode with C across R. R and C in series but with diode across R. series R and diode with C across R. R and C in series but with diode across C. series R and diode with C across R. R and C in series but with diode across R. series R and diode with C across R. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1= Ig2 Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3. Vc1 = Vc2 = Vc3 any value of Ig. Vc1 > Vc2 > Vc3 when Ig1= Ig2 ANSWER DOWNLOAD EXAMIANS APP
Power Electronics To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage. Equal to None of these Less than More than Equal to None of these Less than More than ANSWER DOWNLOAD EXAMIANS APP
Power Electronics The latching current of GTO should be of order 2 A. 1 A. 100 mA. 500 mA. 2 A. 1 A. 100 mA. 500 mA. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A thyristor string is made of a no. of SCR connected in series and parallel. The string have volume and current of 11 KV and 4 KA. The voltage and current rating of available SCRs are 1800 V and 1000 A. For a string efficiency of 90 % let the number of SCRs in series and parallel are a and b respectively. Then the value of a and b will be 7, 5. 5, 7. 6, 4. 4, 6. 7, 5. 5, 7. 6, 4. 4, 6. ANSWER DOWNLOAD EXAMIANS APP
Power Electronics A power semiconductor may undergo damage due to Low di/dt. High di/dt. Low dv/dt. High dv/dt. Low di/dt. High di/dt. Low dv/dt. High dv/dt. ANSWER DOWNLOAD EXAMIANS APP
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