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Power Electronics

Power Electronics
A diac is turned on by ___________.

Gate current
Gate voltage
None of these
A breakover voltage

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Power Electronics
Which of the following is not a characteristic of UJT?

Intrinsic stand off ratio
Peak-point voltage
Negative resistance
Bilateral conduction

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Power Electronics
A modern power semiconductor device that combines the characteristic of BJT and MOSFET is

  IGBT.
 MCT.
 GTO.
 FCT.

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Power Electronics
Thermal voltage VT can be given by

 (K2/q)(T + 1/T - 1).
 KT/q.
  Kq/T.
 qT/K.

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Power Electronics
A power semiconductor may undergo damage due to

 Low dv/dt.
 High dv/dt.
  High di/dt.
 Low di/dt.

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Power Electronics
What happen due to high di / dt?

  Local hot spot.
 Breakdown of junction.
 Insulation failure.
 None of these.

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